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本文采用原位X射线光电子能谱、紫外光电子能谱、高分辨率电子能量损失谱和低能电子衍射技术,研究了温度对P与GaAs(100)表面相互作用的影响。结果表明,经退火后,室温下淀积于GaAs表面的非晶P大部分脱附,仅剩下少量无规分布于表面的P集团。集团中部分P与衬底Ga原子成键,另一部分P则以单质形式存在,继续提高温度退火,将使P集团中的P全部与衬底发生反应生成GaAsP薄层。在高温GaAs衬底上淀积P,将得到GaAsP固溶体薄层。这一薄层有望成为GaAs表面理想的钝化膜。
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It is demonstrated in this paper that the infrared-up-conversion luminescence generation from porous silicon, considered as an enhanced third-order nonlinear optical effect by the recent work, is anisotropic as the polarization vector of normally incident fundamental light is rotated. A new method has been used to determine the anisotropy parameter σ of the third-order nonlinear optical tensor χ(3). Due to the sensitivity of σ to the crystal structure and microscopic electronic properties, the difference in σ′s between porous and crystalline silicon, particularly in their phases, demonstrates that the nanometer structure of porous silicon induces a dra-matic change of the electronic band structure, but the strongly anisotropic crystal property remains unchanged. 相似文献
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