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用石墨烯和Co(CH3COO)2·4H2O作为原料,利用超声辅助法合成了锂离子电池的负极材料CoO纳米颗粒/中空石墨烯纳米纤维复合物.采用X射线衍射(XRD)确定材料的物相组成,采用扫描电子显微镜(SEM)和透射电子显微镜(TEM)观察材料的表面形貌和微观结构,采用X射线光电子能谱(XPS)确定材料的价态结构.采用循环伏安、恒电流充放电和交流阻抗谱表征材料的电化学性能.结果显示,在100 mA/g的电流密度下,循环了160次后,可逆容量仍超过800 mA/g,库仑效率保持在99%以上.该材料优异的电化学性能主要归因于石墨烯的中空纤维结构,中空内部可以容纳电解液,能直接将离子输送到颗粒表面,实现了离子的快速传输;二维中空纤维搭建成三维网络结构,实现了三维电子传导网络. 相似文献
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Three-dimensional vertical ZnO transistors with suspended top electrodes fabricated by focused ion beam technology 下载免费PDF全文
Three-dimensional(3D)vertical architecture transistors represent an important technological pursuit,which have distinct advantages in device integration density,operation speed,and power consumption.However,the fabrication processes of such 3D devices are complex,especially in the interconnection of electrodes.In this paper,we present a novel method which combines suspended electrodes and focused ion beam(FIB)technology to greatly simplify the electrodes interconnection in 3D devices.Based on this method,we fabricate 3D vertical core-double shell structure transistors with ZnO channel and Al2O3 gate-oxide both grown by atomic layer deposition.Suspended top electrodes of vertical architecture could be directly connected to planar electrodes by FIB deposited Pt nanowires,which avoid cumbersome steps in the traditional 3D structure fabrication technology.Both single pillar and arrays devices show well behaved transfer characteristics with an Ion/Ioff current ratio greater than 106 and a low threshold voltage around 0 V.The ON-current of the 2×2 pillars vertical channel transistor was 1.2μA at the gate voltage of 3 V and drain voltage of 2 V,which can be also improved by increasing the number of pillars.Our method for fabricating vertical architecture transistors can be promising for device applications with high integration density and low power consumption. 相似文献
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Large scale fabrication of nitrogen vacancy-embedded diamond nanostructures for single-photon source applications 下载免费PDF全文
Some color centers in diamond can serve as quantum bits which can be manipulated with microwave pulses and read out with laser,even at room temperature.However,the photon collection efficiency of bulk diamond is greatly reduced by refraction at the diamond/air interface.To address this issue,we fabricated arrays of diamond nanostructures,differing in both diameter and top end shape,with HSQ and Cr as the etching mask materials,aiming toward large scale fabrication of single-photon sources with enhanced collection efficiency made of nitrogen vacancy(NV) embedded diamond.With a mixture of O_2 and CHF_3 gas plasma,diamond pillars with diameters down to 45 nm were obtained.The top end shape evolution has been represented with a simple model.The tests of size dependent single-photon properties confirmed an improved single-photon collection efficiency enhancement,larger than tenfold,and a mild decrease of decoherence time with decreasing pillar diameter was observed as expected.These results provide useful information for future applications of nanostructured diamond as a single-photon source. 相似文献
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本文在铜管外制备疏水超疏水组合表面,控制铜管和重力方向的倾角为0°、30°、45°、60°,利用高速摄像系统研究混合蒸气冷凝过程中表面润湿性和重力的协同调控机制,观测了液滴的动态特性,测量了组合表面上混合蒸气传热性能.结果表明:倾角增大,组合表面上的冷凝液滴会偏离重力方向沿着疏水环向下冲刷;倾角60°时,疏水区域的液滴会合并到相邻的上下超疏水区域;和亲水光滑铜管相比,组合表面上含不凝气30%的混合水蒸气冷凝传热随倾角度增加先下降、之后保持不变、最后升高,分别提高50%~65%(竖直)、35%~55%(倾角30°和45°)、45%~55%(倾角60°)。 相似文献
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含氟高分子/SiO2杂化疏水材料的制备及涂层表面性质 总被引:1,自引:0,他引:1
采用自由基溶液聚合与溶胶-凝胶法相结合的方法制备了含氟高分子/SiO2杂化疏水材料.通过甲基丙烯酸十二氟庚酯(FA)与乙烯基三乙氧基硅烷(VTES)共聚合成了含氟硅共聚物(PFAS),进一步通过原硅酸乙酯(TEOS)与PFAS共聚物溶液共水解缩聚制备了具有含氟侧基的碳碳主链高分子和硅氧网络的含氟高分子/SiO2杂化疏水材料.研究结果表明,SiO2组分含量提高可以显著增加杂化材料薄膜的涂敷厚度,改善其耐久性能,而对杂化材料疏水性能的影响不大. 相似文献
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