ZnAl2O4/α-Al2O3复合衬底的制备和GaN薄膜的生长

利用脉冲激光淀积法(PLD)在α-Al₂O₃衬底上淀积了ZnO薄膜, 通过ZnO和α-Al₂O₃固相反应制备了具有ZnAl₂O₄覆盖层的α-Al₂O₃衬底. X射线衍射谱(XRD)表明ZnAl₂O₄薄膜随反应时间由单一(111)取向转变为多晶取向, 然后变为不完全的(111)择优取向. 同时扫描电子显微镜(SEM)照片表明ZnAl₂O₄表面形貌随反应时间由均匀的岛状结构先变为棒状结构, 然后再变为突起的线状结构. 另外, XRD谱显示低温制备的ZnAl₂O₄在高温下不稳定. 在ZnAl₂O₄覆盖的α-Al₂O₃衬底上利用光加热低压MOCVD法直接生长了GaN薄膜. XRD测量表明随ZnAl₂O₄厚度增加GaN由c轴单晶变为多晶, 单晶GaN的摇摆曲线半高宽为0.4°. 结果表明薄ZnAl₂O₄覆盖层的岛状结构有利于GaN生长初期的成核, 从而提高了GaN的晶体质量.     

Synthesis of ZnAl2O4/α-Al2O3 complex substrates and growth of GaN films

With the solid phase reaction between pulsed-laser-deposited (PLD) ZnOfilm and α-Al2O3 substrate, ZnAl2O4/α-Al2O3 complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl2O4 changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM)images indicate that the surface morphology of ZnAl2O4 transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRDspectra present that ZnAl2O4 prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl2O4/α-Al2O3 substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes from c-axis single crystal to poly-crystal as ZnAl2O4 layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4°. Results indicate that islands on thin ZnAl2O4 layer can promote nucleation at initial stage of GaN growth, which leadsto the (0001)-oriented GaN film.     

Two new compounds from Zingiber officinale

A new cyclic diarylheptanoid,1,5-epoxy-3-hydroxy-1-(3-methoxy-4,5-dihydroxyphenyl)-7-(4-hydroxyphenyl)-heptane (1),as well as a new monoterpene,10-O-β-D-glucopyranosyl-hydroxy cineole (2) were isolated from the rhizomes of Zingiber officinale. The structures of compounds 1 and 2 were established based on their spectral data.In addition,the antioxidant activities of these compounds were also measured.     

Low-temperature growth and photoluminescence property of ZnS nanoribbons

At a low temperature of 450 degrees C, ZnS nanoribbons have been synthesized on Si and KCl substrates by a simple chemical vapor deposition (CVD) method with a two-temperature-zone furnace. Zinc and sulfur powders are used as sources in the different temperature zones. X-ray diffraction (XRD), selected area electron diffraction (SEAD), and transmission electron microscopy (TEM) analysis show that the ZnS nanoribbons are the wurtzite structure, and there are two types-single-crystal and bicrystal nanoribbons. Photoluminescence (PL) spectrum shows that the spectrum mainly includes two parts: a purple emission band centering at about 390 nm and a blue emission band centering at about 445 nm with a weak green shoulder around 510 nm.     

Synthesis, structure, spectroscopic properties, and electrochemistry of (1,8,15,22-tetrasubstituted phthalocyaninato)lead complexes

Three (1,8,15,22-tetrasubstituted phthalocyaninato)lead complexes Pb[Pc(alpha-OR)(4)] [H(2)Pc(alpha-OC(5)H(11))(4) = 1,8,15,22-tetrakis(3-pentyloxy)phthalocyanine; H(2)Pc(alpha-OC(7)H(15))(4) = 1,8,15,22-tetrakis(2,4-dimethyl-3-pentyloxy)phthalocyanine; H(2)Pc(alpha-OC(10)H(7))(4) = 1,8,15,22-tetrakis(2-naphthyloxy)phthalocyanine] (1-3) have been prepared as racemic mixtures by treating the corresponding metal-free phthalocyanines H(2)Pc(alpha-OR)(4) (4-6) with Pb(OAc)(2).3H(2)O in refluxing n-pentanol. The molecular structure of Pb[Pc(alpha-OC(5)H(11))(4)] (1) in the solid state has been determined by single-crystal X-ray diffraction analysis. This compound, having a nonplanar structure, crystallizes in the monoclinic system with a P2(1)/c space group. Each unit cell contains two pairs of enantiomeric molecules, which are linked by weak coordination of the Pb atom of one molecule with an aza nitrogen atom and its neighboring oxygen atom from the alkoxy substituent of another molecule, forming a pseudo-double-decker supramolecular structure in the crystals with a short ring-to-ring separation, 2.726 A, and thus a strong ring-ring pi-pi interaction. The decreased molecular symmetry for these complexes has also been revealed by the NMR spectra of 1 and 2. The methyl protons of the 3-pentyloxy and 2,4-dimethyl-3-pentyloxy side chains of 1 and 2, respectively, are chemically inequivalent. In addition to the elemental analysis and various spectroscopic characterizations, these compounds have also been electrochemically studied. Two one-electron oxidations and up to five one-electron reductions have been revealed by cyclic voltammetry (CV) and differential pulse voltammetry (DPV) methods.     

Zinc Stannate Nanostructures for Energy Conversion

To date,ternary metal oxide semiconductor materials have attracted extensive attention worldwide due to their unique optoelectronic properties.As a classical ternary oxide,Zn2SnO4 is featured with the high electron mobility,wide band gap,negligible visible light absorption and tailorable electronic band structures.Thus,it is an ideal material for practical use in solar cells,lithium batteries,sensors,and photo-catalysts.In this review,we summarize the recent research progress of this material with the focus on the synthesis methods,nanostructures,and the resulting effects on the crystal structure,optical properties,and photoelectrochemical properties.Moreover,their potential applications in different devices are highlighted and carefully discussed.     

Two-in-one tecton strategy to construct single crystalline hydrogen-bonded organic framework with high proton conductivity above 100℃

By tactically integrating two different kinds of proton donors and acceptors into one supramolecular tecton, a new crystalline hydrogen-bonded organic framework(HOF-SXU-1) has been developed. HOF-SXU-1 features a remarkable proton conductivity as high as 6.32 mS cm^-1 and an extremely low activation energy of 0.16 eV at 160℃ under anhydrous N₂ conditions.By contrast, under identical conditions, the organic precursors of HOF-SXU-1 only exhibit negligible proton conduction per...     

用肖特基电容电压特性数值模拟法确定调制掺杂AlxGa1-xN/GaN异质结中的极化电荷

研究发展了用肖特基电容电压特性数值模拟确定调制掺杂Al_xGa_1-xN/GaN异质结中极化电荷的方法.在调制掺杂的Al_0.22Ga_0.78N/GaN异质结上制备了Pt肖特基接触,并对其进行了C-V测量.采用三维费米模型对调制掺杂的Al_0.22Ga_0.78N/GaN异质结上肖特基接触的C-V特性进行了数值模拟,分析了改变样品参数对C-V特性的影响.利用改变极化电荷、n-AlGaN 关键词： xGa_1-xN/GaN异质结')" href="#">Al_xGa_1-xN/GaN异质结 极化电荷 电容电压特性 数值模拟