Sm-La二元稀土对铅基板栅材料显微结构和电化学性能的影响

为提高铅酸蓄电池板栅材料的性能,在Pb-Ca-Sn-Al合金中添加了Sm-La二元稀土元素,研究其含量对显微结构和电化学性能的影响。利用金相和循环伏安、线性扫描、阻抗-电位、电化学阻抗谱等电化学测试方法对板栅性能进行了表征。结果表明:Sm-La稀土元素的加入促进合金晶粒细化,随其含量的增加,析出物颗粒变小并弥散分布。与添加Sm的合金相比,复合添加Sm-La的材料具有更低的析氢电位,改善了深放电时铅合金上所形成的阳极Pb(II)膜的阻抗特性,表现出良好的性能。     

铝阳极氧化膜阻挡层的去除方法

多孔型铝阳极氧化膜常被用作制备纳米阵列材料的模板,然而阻挡层的存在却在很多方面制约了其应用.为此,已经提出了各种不同的方法来去除阻挡层.本文将这些方法分为2类,即剥离氧化膜去阻挡层和不剥离氧化膜去阻挡层.前者包括化学腐蚀法、干蚀法、电解剥离法;后者包括阶梯降压法、高电流击穿法、电化学法和有多孔铝支撑的化学溶解法.其中,化学腐蚀法和干蚀法的工艺条件已相当成熟,得到了广泛应用,而其它几种方法还多处于实验室研究阶段.由于氧化膜脆性很大,因此,不剥离氧化膜原位去除阻挡层的方法具有更大的实用价值.     

Electrical and structural properties of diamond films implanted by various doses of oxygen ions

Oxygen-doped diamond films are prepared by implanting various dose oxygen ions into the diamond films synthesized by hot filament chemical vapour deposition, and their electrical and structural properties are investigated. Hall effect measurements show that lower dose oxygen ion implantation is beneficial to preparing n-type diamonds. The carrier concentration increases with the dose increasing, indicating that oxygen ions supply electrons to the diamonds. The results of AES spectrum indicate that oxygen ions are doped into the diamond films, and the O-implanted depth is around 0.1μm. Raman spectrum measurements indicate that the lower dose oxygen ion implantation at 10¹⁴cm^-2 or 10¹⁵cm^-2 is favourable for producing less damaged O-doped diamond films.