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MONTE CARLO STUDIES OF RADIATION DAMAGE INDUCED BY FUSION:DYNAMIC SIMULATION OF SPUTTERING 下载免费PDF全文
In this paper, the sputtering caused by fusion of 4He particles in the first wall materials is investigated by using the dynamic Monte Carlo simulation, which is based on the binary collision approximation. The dependences of sputtering yields on the incident energy and angle, as well as the comparisons of results calculated using the Monte Carlo methed with results from experiments, are discussed. Energy spectrum and angular distributions of sputtered species, the depth of origin of the sputtered particles as well as range distributions of incident ions are given. From a comparison between the related experimental data and the calculated results with static and dynamic simulation it has been found that a better agreement is obtained for dynamic simulation. 相似文献
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本文用基于两体碰撞近似的蒙特-卡罗模拟方法研究不同相互作用势(Moliére势和Universal势)对溅射模拟计算结果的影响,并用Wilcoxon配对符秩检验法给出上述结果的显著性差异。
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In this paper, the growth process of silicon nitride films by ion beam enhanced depo-sition (IBED) is investigated by using the dynamic Monte Carlo simulation, which is based on the binary collision approximation. The effects of the incident angles, energies of the bombarded ions and the interaction potentials on the composition of the films are discussed. The successive and alternate deposition process of silicon and implantation of nitrogen ions have been applied to simulate the actual continuous and synchronous process of IBED. The relationship between the calculated composition of the films and the ion/atom arrival ratio of implanted nitrogen ions to deposited silicon atoms has been established. The composition profile obtained by computer simulation is in good agreement with the experimental results. 相似文献
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