Stable field emission of ion-sputtering-induced Si nanocone arrays

Silicon nanocone arrays with metal silicide （Fe and Cr）-enriched apexes are fabricated on Si （100） substrate by the Ar＋ ion bombardment method. The nanocone arrays show excellent field emission properties. A high current density （J） of -0.03 mA/cm^2 under a field of -3 V/μm, a very low turn-on field of -1.4 V/μm, and a very large enhancement factor of -9466 are also obtained. The emission J of Si nanocone arrays remains extremely stable for long periods of time （24 h）.