Raman lasing and other nonlinear effects based on ultrahigh-Q CaF2 optical resonator

The calcium fluoride (CaF₂) whispering gallery mode crystalline resonator is an excellent platform for nonlinear optical applications because of the decreasing in threshold caused by ultrahigh quality (Q) factor. In this paper, we achieved the observation of Raman lasing, first-order Raman comb, and second-order Raman lasing in a CaF₂ disk resonator with a diameter of 4.96 mm and an ultrahigh-Q of 8.43× 10⁸ at 1550-nm wavelength. We also observed thermal effects in CaF₂ disk resonator, and the threshold of thermo-optical oscillation is approximately coincident with Raman lasing, since the intracavity power increases rapidly when the power reaches the threshold, and higher input pump power results in longer thermal drift and higher Raman emission power. With a further increase in pump power, the optical frequency combs range is from 1520 nm to 1650 nm, with a wavelength interval of 4× m FSR. It is a promising candidate for optical communication, biological environment monitoring, spectral analysis, and microwave signal sources.     

2μm GaSb基低垂直发散角布拉格反射波导激光器优化设计

为实现2 μm低发散角激光,提出在GaSb基半导体激光器中引入布拉格反射波导,利用光子带隙效应替代传统的全反射进行光场限制。研究了分布反馈反射镜(DBR)的厚度、对数、高低折射率DBR厚度比以及中心腔厚度等参数对激光器垂直远场发散角和光限制因子的影响。结果表明:垂直远场发散角随单对DBR厚度的增加而减小;光限制因子与远场发散角都随拉格反射镜对数的增加而减小,随高低折射率DBR厚度比的减小而增大;随着中心层厚度的增大,光限制因子减小而远场发散角增大。最终在理论上优化设计出了一种双边布拉格反射波导结构的超低垂直发散角2 μm GaSb基边发射半导体激光器,其垂直远场发散角可降低到10°以下。     

基于黑磷的纳光机电磁矢量传感器设计

基于二维材料的纳机电谐振器具有体积小、频率高、品质因数高等优势,在传感领域具有很大的应用潜力。其中,黑磷由于其波纹状的平面结构和各向异性的机械特性,为平面内矢量传感提供了可能。利用黑磷设计了一种光学激发光学读出的新型纳光机电磁矢量传感器。利用有限元分析法,探究了黑磷层数和长宽比对矢量性的影响,确定了黑磷谐振器的尺寸为0.6μm×0.134μm×0.5 nm;分别探索了高杨氏模量和低杨氏模量方向对磁场响应的各向异性。通过谐振模式的空间分布,解释了角度和长宽比对器件灵敏度和矢量性的影响机理。结果表明,将磁场旋转90°,灵敏度可从-4.048 MHz/mT变化为5.796 MHz/mT。与精度相近的洛伦兹力的微机电磁传感器相比,所设计传感器的频率可提高6个数量级,尺寸可缩小6个数量级。该设计为新型纳光机电矢量传感器的制备提供了一种方法。