Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility tran-sistors (mHEMTs) grown on GaAs substrate by metal organic chemical vapour deposition (MOCVD) are reported. By using a novel combined optical and e-beam photolithography technology, submicron mHEMTs devices have been achieved. The devices exhibit good DC and RF performance. The maximum current density was 817 mA/mm and the maximum transconductance was 828 mS/mm. The non-alloyed Ohmic contact resistance Rc was as low as 0.02 Ω- mm. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) were 146 GHz and 189 GHz, respectively. This device has the highest fT yet reported for a 160-nm gate-length HEMTs grown by MOCVD. The output conductance is 28.9 mS/mm, which results in a large voltage gain of 28.6. Also, an input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 4.3 is obtained in the device.     

认知无线网络中基于Sigmoid函数的功率控制算法研究

为了实现认知无线网络中频谱分配公平性以及契合现代化绿色通信的需求,根据非合作博弈论和干扰温度,引入信道状态概念,设计出一种新型功率控制算法,分析了该算法的收敛性、纳什均衡解的存在性和唯一性。该算法不仅可以快速收敛,符合实时通信,而且分布式实施,简单实用。仿真结果表明,相比其他算法,该算法系统干扰小,能源消耗低,具有抗干扰性能,而且在日益多用户网络的情况下,具有低功率、低干扰,提高网络的整体效益,更加符合现代化的绿色通信的需求。