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A comparison study on the electronic structures,lattice dynamics and thermoelectric properties of bulk silicon and silicon nanotubes 下载免费PDF全文
In order to investigate the mechanism of the electron and phonon transport in a silicon nanotube(SiNT),the electronic structures,the lattice dynamics,and the thermoelectric properties of bulk silicon(bulk Si)and a SiNT have been calculated in this work using density functional theory and Boltzmann transport theory.Our results suggest that the thermal conductivity of a SiNT is reduced by a factor of 1,while its electrical conductivity is improved significantly,although the Seebeck coefficient is increased slightly as compared to those of the bulk Si.As a consequence,the figure of merit(ZT)of a SiNT at 1200 K is enhanced by 12 times from 0.08 for bulk Si to 1.10.The large enhancement in electrical conductivity originates from the largely increased density of states at the Fermi energy level and the obviously narrowed band gap.The significant reduction in thermal conductivity is ascribed to the remarkably suppressed phonon thermal conductivity caused by a weakened covalent bonding,a decreased phonon density of states,a reduced phonon vibration frequency,as well as a shortened mean free path of phonons.The other factors influencing the thermoelectric properties have also been studied from the perspective of electronic structures and lattice dynamics. 相似文献
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铁掺杂四方、三方两相共存PZN-PZT陶瓷的Raman散射分析 总被引:1,自引:2,他引:1
Raman散射常用于研究温度变化时铁电体的各种相变,如铁电-顺电相变等,但是,利用Raman散射研究掺杂诱导的相变并不常见。本文采用Raman散射研究了铁掺杂Pb(Zn1/3Nb2/3)0.2(Zr0.5Ti0.5)0.8O3(PZN-PZT)铁电陶瓷中三方-四方共存现象。通过分析四方相E(3TO)和A1(3TO)模式与三方相Rl模式,确定了铁掺杂对PZN-PZT陶瓷中三方-四方共存结构的影响。这一结果,得到了XRD相分析的验证。因此,通过对Raman散射中三方-四方振动模式的分析,可以表征掺杂诱导的PZT基陶瓷中三方-四方相结构变化趋势。 相似文献
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