衬底对宽带隙CGS薄膜的影响

分别在Al∶ ZnO(ZAO)薄膜和Mo薄膜两种不同衬底材料上,采用“三步法”共蒸发工艺沉积了约0.8 μm厚的CuGaSe2(CGS)薄膜,用X射线衍射仪测量薄膜的织构,研究不同衬底材料对CGS薄膜的影响.在ZAO薄膜底电极上沉积的CGS薄膜的(112)衍射峰强度较Mo薄膜底电极上减弱,(220/204)衍射峰反而增强.     

卷对卷技术制备大面积柔性CIGS薄膜太阳电池吸收层

以轻质柔性聚酰亚胺(PI)材料为衬底,采用低温共蒸发"一步法"工艺制备四元化合物Cu(In,Ga)Se2(CIGS)薄膜.本文采用卷对卷(roll-to-roll)技术,在衬底幅宽300 mm的方向上实现了良好的成膜均匀性.利用XRD和XRF分别分析了所制备薄膜的晶相、组分和厚度,SEM分析了薄膜的表面形貌,讨论了不同衬底温度下制备的CIGS薄膜的性能.     

Zn在Ga1-xAlxAs中的扩散规律

本文论述了在720℃～750℃的温度下,Zn在Ga1-xAlxAs,GaAs中的扩散。研究了结深x1,随片子表面Al组份x值的变化规律。实验表明在同一扩散条件下,Ga1-xAlxAs与GaAs两种材料的结深xj并不相同。在此基础上获得了Al组份x=0.34的最佳扩散条件。     

用镓铝砷负阻发光二极管试制医院的床位呼唤器

npnp-Ga1-xAlxAs负阻发光二极管〔符号:SLED〕是一种新型属于多功能半导体发光元件,它兼具发光和负阻的伏安电特性,具有存储功能。本受介绍了把这种元件和发光二极管结合在一起第一次制成固体化显示的医院床位呼唤器。它具有寿命长、可靠性高、体积小、耗电少、可寄存呼唤信号、光色柔和、线路简单等多方面优点,这些使它优于先前采用继电器、小电珠[1]、电灯泡、或荧光数字管[2]等元件所组成的床位呼唤器。     

Thickness optimization of Mo films for Cu（InGa）Se2 solar cell applications

Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5 μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of film growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1 μm as the back contact, the Cu(InGa)Se2 solar cell can reach a conversion efficiency of 13.15%.