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本文论述了在720℃~750℃的温度下,Zn在Ga1-xAlxAs,GaAs中的扩散。研究了结深x1,随片子表面Al组份x值的变化规律。实验表明在同一扩散条件下,Ga1-xAlxAs与GaAs两种材料的结深xj并不相同。在此基础上获得了Al组份x=0.34的最佳扩散条件。 相似文献
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npnp-Ga1-xAlxAs负阻发光二极管〔符号:SLED〕是一种新型属于多功能半导体发光元件,它兼具发光和负阻的伏安电特性,具有存储功能。本受介绍了把这种元件和发光二极管结合在一起第一次制成固体化显示的医院床位呼唤器。它具有寿命长、可靠性高、体积小、耗电少、可寄存呼唤信号、光色柔和、线路简单等多方面优点,这些使它优于先前采用继电器、小电珠[1]、电灯泡、或荧光数字管[2]等元件所组成的床位呼唤器。 相似文献
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Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5 μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of film growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1 μm as the back contact, the Cu(InGa)Se2 solar cell can reach a conversion efficiency of 13.15%. 相似文献
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