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在模拟的空间环境试验中测试了锰钴镍型红外探测器的电阻值和低频噪声参量.采用钴-60源分别在10 rad(si)/s和0.1 rad(si)/s的剂量率下对两组样品累积辐照到总剂量150 krad(si),结果表明:在0.1rad(si)/s剂量率下探测器低频噪声退化量远大于10 rad(si)/s剂量率下的低频噪声退化量.对第三组样品先后施加了三种热应力,即无偏热应力(40℃,保持4h),加偏热应力(偏置电压±15 V,40℃,保持600 h)和无偏热循环(-40℃到40℃,温度变化率1℃/s,峰值温度保持1h,20个循环),结果表明:热应力试验中,样品电阻值变化规律相对一致,但低频噪声的退化趋势存在明显差异,且失效探测器表现为低频噪声突然增大.分析表明,无偏热应力与加偏热应力引起的低频噪声退化来源于电阻薄片内部的缺陷,而热循环导致的低频噪声退化来源于连接Pt引线焊点接触处的潜在缺陷.研究发现噪声系数是锰钴镍型红外探测器低频噪声退化的敏感参量,热应力与热循环则可以有效甄别该类器件噪声退化. 相似文献
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Radiation-induced 1/f noise degradation of PNP bipolar junction transistors at different dose rates 下载免费PDF全文
It is found that ionizing-radiation can lead to the base current and the 1/f noise degradations in PNP bipolar junction transistors. In this paper, it is suggested that the surface of the space charge region of the emitter-base junction is the main source of the base surface 1/f noise. A model is developed which identifies the parameters and describes their interactive contributions to the recombination current at the surface of the space charge region. Based on the theory of carrier number fluctuation and the model of surface recombination current, a 1/f noise model is developed. This model suggests that 1/f noise degradations are the result of the accumulation of oxide-trapped charges and interface states. Combining models of ELDRS, this model can explain the reason why the 1/f noise degradation is more severe at a low dose rate than at a high dose rate. The radiations were performed in a Co~(60) source up to a total dose of 700 Gy(Si). The low dose rate was 0.001 Gy(Si)/s and the high dose rate was 0.1 Gy(Si)/s. The model accords well with the experimental results. 相似文献
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