Anisotropic Fermi Surfaces,Electrical Transport,and Two-Dimensional Fermi Liquid Behavior in Layered Ternary Boride MoAlB

We report a study of fermiology,electrical anisotropy,and Fermi liquid properties in the layered ternary boride MoAlB,which could be peeled into two-dimensional（2 D） metal borides（MBenes）.By studying the quantum oscillations in comprehensive methods of magnetization,magnetothermoelectric power,and torque with the firstprinciple calculations,we reveal three types of bands in this system,including two 2 D-like electronic bands and one complex three-dimensional-like hole band.Meanwhile,a large out-...     

Pressure-Dependent Point-Contact Spectroscopy of Superconducting PbTaSe_2 Single Crystals

We develop an experimental tool to investigate the order parameter of superconductors by combining pointcontact spectroscopy measurement with high-pressure technique.It is demonstrated for the first time that planar point-contact spectroscopy measurement on noncentrosymmetric superconducting PbTaSe₂ single crystals is systematically subjected to hydrostatic pressures up to 12.1 kbar.Under such a high pressure,the normal-state contact resistance is sensitive to the applied pressure,ref...     

Negative Longitudinal Magnetoresistance in the (8-Axis Resistivity of Cd

We report a systematic study on magnetotransport properties of the single crystal of cadmium(Cd). When the applied magnetic field B is perpendicular to the current I, the resistivities for both directions(I ‖ a, I ‖ c) show field induced metal-to-insulator-like transitions. The isothermal magnetoresistance(MR) at low temperatures increases approximately as the square of the magnetic field without any sign of saturation, and reaches up to 1140000% and 58000% at T = 2 K and B = 9 T for I ‖ a and I ‖ c, respectively. As the magnetic field rotates to parallel to the current, no sign of negative MR is observed for I ‖ a, while an obvious negative MR appears up to-70% at 2 K and 9 T for the current flowing along the c-axis, and the negative longitudinal MR shows a strong dependence of the electrode position on the single crystal. These results suggest that the negative longitudinal MR is caused by the dislocations formed in the process of crystal growing along the c-axis. Further studies are needed to clarify this point.     

Experimental Observations Indicating the Topological Nature of the Edge States on HfTe_5

The topological edge states of two-dimensional topological insulators with large energy gaps furnish ideal conduction channels for dissipationless current transport. Transition metal tellurides X_(Te5)X=Zr, Hf) are theoretically predicted to be large-gap two-dimensional topological insulators, and the experimental observations of their bulk insulating gap and in-gap edge states have been reported, but the topological nature of these edge states still remains to be further elucidated. Here, we report our low-temperature scanning tunneling microscopy/spectroscopy study on single crystals of HfTe5. We demonstrate a full energy gap of ～80 meV near the Fermi level on the surface monolayer of HfTe5 and that such an insulating energy gap gets filled with finite energy states when measured at the monolayer step edges. Remarkably, such states are absent at the edges of a narrow monolayer strip of one-unit-cell in width but persist at both step edges of a unit-cell wide monolayer groove. These experimental observations strongly indicate that the edge states of HfTe5 monolayers are not trivially caused by translational symmetry breaking, instead they are topological in nature protected by the 2 D nontrivial bulk properties.     

Maximum entropy mobility spectrum analysis for the type-I Weyl semimetal TaAs

Due to non-saturating magnetoresistance (MR) and the special compensation mechanism, the Weyl semimetal TaAs single crystal has attracted considerable attention in condensed matter physics. Herein, we use maximum entropy mobility spectrum analysis (MEMSA) to extract charge carrier information by fitting the experimentally measured longitudinal and transverse electric transport curves of TaAs. The carrier types and the number of bands are obtained without any hypothesis. Study of the temperature dependence shows details of carrier property evolution. Our quantitative results explain the non-saturated magnetoresistance and Hall sign change phenomena of TaAs.