Effect of oxygen on regulation of properties of moderately boron-doped diamond films

Regulation of oxygen on properties of moderately boron-doped diamond films is fully investigated. Results show that, with adding a small amount of oxygen (oxygen-to-carbon ratio < 5.0%), the crystal quality of diamond is improved, and a suppression effect of residual nitrogen is observed. With increasing ratio of O/C from 2.5% to 20.0%, the hole concentration is firstly increased then reduced. This change of hole concentration is also explained. Moreover, the results of Hall effect measurement with temperatures from 300 K to 825 K show that, with adding a small amount of oxygen, boron and oxygen complex structures (especially B₃O and B₄O) are formed and exhibit as shallow donor in diamond, which results in increase of donor concentration. With further increase of ratio of O/C, the inhibitory behaviors of oxygen on boron leads to decrease of acceptor concentration (the optical emission spectroscopy has shown that it is decreased with ratio of O/C more than 10.0%). This work demonstrates that oxygen-doping induced increasement of the crystalline and surface quality could be restored by the co-doping with oxygen. The technique could achieve boron-doped diamond films with both high quality and acceptable hole concentration, which is applicable to electronic level of usage.     

Significant suppression of residual nitrogen incorporation in diamond film with a novel susceptor geometry employed in MPCVD

This work proposed to change the structure of the sample susceptor of the microwave plasma chemical vapor deposition (MPCVD) reaction chamber, that is, to introduce a small hole in the center of the susceptor to study its suppression effect on the incorporation of residual nitrogen in the MPCVD diamond film. By using COMSOL multiphysics software simulation, the plasma characteristics and the concentration of chemical reactants in the cylindrical cavity of MPCVD system were studied, including electric field intensity, electron number density, electron temperature, the concentrations of atomic hydrogen, methyl, and nitrogenous substances, etc. After introducing a small hole in the center of the molybdenum support susceptor, we found that no significant changes were found in the center area of the plasma, but the electron state in the plasma changed greatly on the surface above the susceptor. The electron number density was reduced by about 40%, while the electron temperature was reduced by about 0.02 eV, and the concentration of atomic nitrogen was decreased by about an order of magnitude. Moreover, we found that if a specific lower microwave input power is used, and a susceptor structure without the small hole is introduced, the change results similar to those in the surface area of the susceptor will be obtained, but the spatial distribution of electromagnetic field and reactant concentration will be changed.     

用离子交换法预处理的高效液相色谱一电化学检测法测定尿中儿茶酚胺

用高效液相色谱—电化学检测法测定尿中儿茶酚胺(CAs)需对尿样进行预处理。预处理方法很多,其中有氧化铝吸附法,各种有机溶剂提取法、双柱双泵直接进样法和离子交换法等。我们采用一种弱阳离子交换树脂对尿样进行预处理。实验证明,与其它预处理法比较本法操作简便快速。回收率高,对CAs提取的专一性强,适用于临床和实验室的分析和研究。     

枢轨接触面形貌对电枢起动特性的影响

在脉冲大电流直线驱动装置中,电枢和轨道的接触状态会改变电枢起动特性,而电枢起动过程将直接影响整个发射系统的效率和寿命,因此有必要对电枢起始阶段的滑动接触状态进行研究。搭建发射实验平台,通过高速相机观察电枢起动状态,并结合有限元软件ANSYS,对电枢的预紧力、初始接触状态以及电磁压力、电流密度进行仿真分析,研究电枢表面形貌对电枢起动的影响。结论表明:开槽电枢增加了电枢本身的柔顺性,使得预紧力增大,同时由于电流趋肤效应使得电流密度分布更加均匀,从而电磁压力增大,电枢起动变慢,接触电阻变小。实验和仿真结果对于改善电枢起动过程的接触状态,减轻烧蚀具有重要意义。     

Origin,characteristics, and suppression of residual nitrogen in MPCVD diamond growth reactor

Unintentional nitrogen incorporation has been observed in a set of microwave plasma chemical vapor deposition (MPCVD)-grown samples. No abnormality has been detected on the apparatus especially the base pressure and feeding gas purity. By a comprehensive investigation including the analysis of the plasma composition, we found that a minor leakage of the system could be significantly magnified by the thermal effect, resulting in a considerable residual nitrogen in the diamond material. Moreover, the doping mechanism of leaked air is different to pure nitrogen doping. The dosage of several ppm of pure nitrogen can lead to efficient nitrogen incorporation in diamond, while at least thousands ppm of leaked air is required for detecting obvious residual nitrogen. The difference of the dosage has been ascribed to the suppression effect of oxygen that consumes nitrogen. As the unintentional impurity is basically detrimental to the controllable fabrication of diamond for electronic application, we have provided an effective way to suppress the residual nitrogen in a slightly leaked system by modifying the susceptor geometry. This study indicates that even if a normal base pressure can be reached, the nitrogen residing in the chamber can be "activated" by the thermal effect and thus be incorporated in diamond material grown by a MPCVD reactor.