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Thermal analytic model of current gain for bipolar junction transistor-bipolar static induction transistor compound device
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This paper proposes a thermal analytical model of current gain for
bipolar junction transistor-bipolar static induction transistor
(BJT-BSIT) compound device in the low current operation. It also
proposes a best thermal compensating factor to the compound device
that indicates the relationship between the thermal variation rate
of current gain and device structure. This is important for the design
of compound device to be optimized. Finally, the analytical model
is found to be in good agreement with numerical simulation and experimental
results. The test results demonstrate that thermal variation rate of
current gain is below 10% in 25℃--85℃ and 20{\%} in
-55℃--25℃. 相似文献
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