Raman Spectrum of Epitaxial Graphene on SiC （0001） by Pulsed Electron Irradiation

We report new Raman features of epitaxial graphene （EG） on Si-face 4H-SiC prepared by pulsed electron irradiation （PEI）. With increasing graphene layers, frequencies of G and 2D peaks show blue-shifts and approach those of bulk highly-oriented pyrolytic graphite. It is indicated that the EG is slightly tension strained and tends to be strain-free. Meanwhile, single Lorentzian line shapes are well fitted to the 2D peaks of EG on SiC（O001） and their full widths at half maximum decrease with the increasing graphene layers, which indicates that the multilayer EG on Si-face can also contain turbostratic stacking by our PEI route instead of only AB Bernal stacking by a traditional thermal annealing method. It is worth noting that the stacking style plays an important role on the charge carrier mobility. Therefore our findings will be a candidate for growing quality graphene with high carrier mobility both on the Si- and C-terminated SiC substrate. Mechanisms behind the features are studied and discussed.     

石英缝管原子捕集-火焰原子吸收光谱法测定化探样品中的铅

采用石英缝管原子捕集技术,可实现原子高效捕集和瞬间释放,使火焰原子吸收法测定铅的灵敏度比常规FAAS测定铅的灵敏度提高三至四倍。精密度与火焰原子吸收法相同。通过实验,建立了石英缝管原子捕集-火焰原子吸收光谱法测定化探样品中铅的分析方法,方法的检出限（CL）可达3.82μg/g,精密度（RSD）可达1.72%,应用于化探样品中铅的测定效果令人满意。     

Asymmetrical plasmon reflections in tapered graphene ribbons with wrinkle edges

Asymmetrical graphene plasmon reflection patterns are found in infrared near-field images of tapered graphene ribbons epitaxially grown on silicon carbon substrates. Comparing experimental data with numerical simulations, the asymmetry of these patterns is attributed to reflection of plasmons by wrinkled edges naturally grown in the graphene. These graphene wrinkles are additional plasmon reflectors with varying optical conductivity, which act as nanometer scale plasmonic modulators and thus have potential applications in photoelectric information detectors, transmitters, and modulators.     

宽禁带半导体碳化硅单晶生长和物性研究进展

本文介绍了最近几年在SiC单晶生长和晶片加工技术产业化进程中的系列进展。研究出SiC单晶生长的扩径技术,4英寸SiC晶体单晶直径达105 mm。晶体质量逐步提高,至2011年,大部分晶片微管密度小于1个/cm2,反映晶体结晶质量的X射线摇摆曲线半高宽小于20″;生长的导电型SiC晶体电阻率小于0.02Ω.cm,半绝缘型SiC晶体电阻率大于108Ω.cm,电阻率分布均匀性良好。研究出即开即用SiC晶片批量加工技术,晶片表面粗糙度低于0.2 nm,翘曲度和总厚度变化满足工业化批量生产要求。与此同时,在基础物性研究方面也取得了系列研究成果。首次在实验上给出了直接证据证明SiC晶体中的双空位能够诱导出磁性,并从理论上予以证明。利用多种方法在SiC衬底上成功制备出大面积、高质量、性能优异的石墨烯。     

A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide

A self-powered graphene-based photodetector with high performance is particularly useful for device miniaturization and to save energy.Here,we report a graphene/silicon carbide(SiC)-based self-powered ultraviolet photodetector that exhibits a current responsivity of 7.4 m A/W with a response frequency of over a megahertz under 325-nm laser irradiation.The built-in photovoltage of the photodetector is about four orders of magnitude higher than previously reported results for similar devices.These favorable properties are ascribed to the ingenious device design using the combined advantages of graphene and SiC,two terminal electrodes,and asymmetric light irradiation on one of the electrodes.Importantly,the photon energy is larger than the band gap of SiC.This self-powered photodetector is compatible with modern semiconductor technology and shows potential for applications in ultraviolet imaging and graphene-based integrated circuits.     

尿酸在有序介孔碳-壳聚糖修饰电极上的电化学行为及其测定

用硬模板法合成了有序介孔碳(OMC),并以壳聚糖(Chitosan)作为分散剂制备了有序介孔碳-壳聚糖复合膜(OMC-Chitosan)修饰电极.应用该电极研究了尿酸(UA)的电化学行为以及实际样品的分析检测.在0.1 mol/L(pH 6.5)的磷酸盐(PBS)缓冲溶液中,UA在OMC-Chitosan修饰电极上于0.334 V处产生一灵敏的不可逆氧化峰,氧化峰电流(ipa)与UA的浓度在4.0×10-6～2.0×10-4 mol/L范围内呈良好的线性关系,相关系数为0.9997,检出限为2.0×10-6 mol/L.对0.2 mmol/L UA平行测定10次,相对标准偏差为3.8%,表明该电极重现性和稳定性良好.     

抗坏血酸在纳米银DNA修饰电极上的电化学行为研究

利用电化学生长法制备了纳米银DNA修饰电极.在pH 4.1的磷酸盐(PBS)缓冲溶液中研究了抗坏血酸(AA)在该电极上的电化学行为,实验得到电荷传递系数α=0.41、扩散系数D=1.22×10-5 cm2 /s.建立了利用修饰电极催化作用快速测定抗坏血酸的方法,修饰电极对抗坏血酸的催化氧化峰与抗坏血酸的浓度分别在1.0×10-2～5.0×10-5 mol/L、5.0×10-6～5.0×10-8 mol/L范围内呈线性关系,检出限为1.0×10-9 mol/L.该方法快速、灵敏.     

高温热处理a面AlN表面形貌演变机理

非极性a面AlN(a-AlN)能够从根本上解决极性AlN引起的量子限制斯塔克效应问题,是提升AlGaN发光器件效率的有效途径.但是,非极性AlN生长面临更大的挑战,目前难以实现低缺陷密度、高平整表面的非极性a-AlN.高温热处理是一种提高AlN质量的有效方法,但在热处理过程中,非极性a-AlN的表面形貌演变的物理机理尚...     

双酚A在介孔碳修饰电极上的电化学行为及其测定

采用壳聚糖(CTS)作为有序介孔碳的分散剂,制备了有序介孔碳修饰玻碳电极(OMC/CTS/GCE).用循环伏安法(CV)研究了环境激素双酚A在有序介孔碳修饰电极上的电化学行为.结果表明,介孔碳修饰电极对双酚A有强烈的电催化作用,在pH 8.0的磷酸盐缓冲溶液(PBS)中,双酚A在0.479 V处有1个明显的氧化峰,峰电流与双酚A浓度在4.5×10-8～1.2×10-5 mol·L-1范围内呈良好的线性关系,检出限为2.0×10-8 mol·L-1(S/N=3,n=8).该法用于湖水样品中双酚A含量的测定,回收率为98%～104%,并与荧光法对照,测定结果吻合.     

高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文）

二维(2D)石墨烯具有原子层厚度,在电子器件中展示出突破摩尔定律限制的巨大潜力。目前,化学气相沉积(CVD)是一种广泛应用于石墨烯生长的方法,满足低成本、大面积生产和易于控制层数的需求。然而,由于催化金属(例如Cu)衬底一般为多晶特性,导致CVD法生长的石墨烯晶体质量相对较差。为此,通过高温退火工艺制备了Cu (111)单晶衬底,使石墨烯的初始成核过程得到了很好的控制,从而实现了厘米尺寸的高质量单晶石墨烯的制备。根据二者的晶格匹配关系,Cu (111)衬底为石墨烯生长提供了唯一的成核取向,相邻石墨烯成核岛的边界能够缝合到一起。单晶石墨烯具有高电导率,相较于原始多晶Cu上生长的石墨烯(1 415.7Ω·sq^-1),其平均薄层电阻低至607.5Ω·sq^-1。高温退火能够清洁铜箔,从而获得表面粗糙度较低的洁净石墨烯。将石墨烯用于场效应晶体管(FET),器件的最大开关比为145.5,载流子迁移率为2.31×10³ cm²·V^-1·s^-1。基于以上结果,相信本工作中...