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The Ta/Si multilayers on (100) Si substrate have been studied over the annealing temper-ature range from 500 to 900℃ by X-ray diffraction and cross-section transmission electron microscopy. The periodicity of the multilayers becomes worse with increasing annealing tem-perature and disappears at 750℃. At 600℃, two kinds of modulation wavelength coexist because the size of several TaSi2 grains is larger than the contracted original modulation wavelength. The films are contracted after annealing. The largest contraction, at least 40nm decreasing in thickness, occurs at 600℃. When the annealing temperature is lower than 600℃, h-TaSi2 grains grow randomly and the growth is not affected by the substrate. At temperatures higher than 750℃, h-TaSi2 grows preferentially in [001] direction parallel to [100] axis of Si substrate. The appearance of texture depends on whether the atomic diffusion is short range or long range at the corresponding annealing temperature. 相似文献
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The cathode deposit produced by carbon are discharge wae studied by scanning electron microscopy, high resolution electroa microscopy, X-ray diffraction and Raman spectroscopy. The results indicate that the stacking of hexagonal carbon layer in the discharged graphite is different from the ABAB stacking sequence in graphite, and that carboy nanotube is a kind of graphite-like micro-crystal with a low-dimensional structure. 相似文献
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用直流反应溅射方法在硅衬底上淀积了ZnO薄膜,测量它们的光致发光(PL)光谱,观察到两个发光峰,峰值能量分别为3.18(紫外峰,UV)和2.38eV(绿峰).样品用不同温度分别在氧气、氮气和空气中热处理后,测量了PL光谱中绿峰和紫外峰强度随热处理温度和气氛的变化,同时比较了用FP-LMT方法计算的ZnO中几种本征缺陷的能级位置.根据实验和能级计算的结果,推测出ZnO薄膜中的紫外峰与ZnO带边激子跃迁有关,而绿色发光主要来源于导带底到氧错位缺陷(OZn)能级的跃迁,而不是通常认为的氧空
关键词:
ZnO薄膜
热处理
光致发光光谱
缺陷能级 相似文献
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