电感电流伪连续模式下Boost变换器的分数阶建模与分析

基于电感和电容本质上是分数阶的事实,采用分数阶微积分理论建立了电感电流伪连续模式下Boost变换器的区间分数阶数学模型.依据状态平均建模方法,建立了Boost变换器工作于电感电流伪连续模式下的分数阶状态平均模型.通过所建的分数阶数学模型对其电感电流和输出电压进行了理论分析以及传递函数的推导,并比较了与整数阶数学模型的区别.根据改进的Oustaloup分数阶微积分滤波器近似算法,采用电感和电容的等效分数阶电路模型,在Matlab/Simulink的仿真环境下,对其数学模型和电路模型进行了仿真对比,分析了模型误差产生的原因,验证了所建的分数阶数学模型以及对其理论分析的正确性.最后,指出了分数阶Boost变换器工作于电感电流伪连续模式与连续模式、断续模式的区别与联系.     

Superconductivity in self-flux-synthesized single crystalline R_2Pt_3Ge_5(R=La,Ce,Pr)

In order to study the basic superconductivity properties of R_2Pt_3Ge_5, we synthesized the single crystalline samples by the Pt–Ge self-flux method. R_2Pt_3Ge_5(R = La, Ce) were also grown for a systematic study. Zero-resistivity was observed in both the La-and Pr-based samples below the reported superconducting transition temperatures. However, magnetic susceptibility measurements showed low superconductivity volume fractions in both La_2Pt_3Ge_5 and R_2Pt_3Ge_5(less than2%). Ce_2Pt_3Ge_5 did not show any signature of superconductivity. From the specific heat measurements, we did not observe a superconducting transition peak in R_2Pt_3Ge_5, suggesting that it is not a bulk superconductor. The magnetic susceptibility and heat capacity measurements revealed two antiferromagnetic(AFM) orders in R_2Pt_3Ge_5 at T_(N1)= 4.2 K and T_(N2)= 3.5K, as well as a single AFM transition at TN= 3.8 K in Ce_2Pt_3Ge_5.     

电感电流伪连续模式下分数阶Boost变换器的非线性控制

基于电容和电感都是分数阶的事实,采用分数阶微积分理论,建立了电感电流伪连续模式下Boost变换器的分数阶状态空间平均模型.针对其分数阶模型具有仿射非线性系统的特点,根据分数阶的类Lyapunov稳定性理论,设计了适用于分数阶电感电流伪连续模式下Boost变换器的一种分数阶非线性控制器.依据分抗链及改进的Oustaloup分数阶近似算法,得到了分数阶电感和电容的等效电路模型,用Matlab/Simulink软件对所设计的控制器进行了仿真验证.结果表明:所设计的分数阶非线性控制器对分数阶电感电流伪连续模式下的Boost变换器的动态和稳态性能有显著的提高,并且在输入电压和负载大幅度波动的情况下,仍然能够确保系统具有良好的稳定性和动态性能.