赫兹型微裂纹光场调制增强作用的系统研究

通过改变裂纹的倾角、宽度和深度参数,模拟了赫兹型裂纹在不同参数下对光场调制能力的不同. 模拟发现,倾斜角度为20.9°到45°之间的裂纹危害最大,倾角大于45°小于48.2°的裂纹危害也十分大,而倾斜角度为45°时的裂纹危害最小. 对于30°倾角的赫兹型裂纹,一定范围内,赫兹型裂纹深度的增加会导致其光场调制增强能力呈二次方关系增加,但宽度的增加不会使其光场调制增强作用增加. 裂纹深度和宽度的增加可以用来近似裂纹的演化过程,所以裂纹的扩展导致了其光场调制能力的增加,进而导致损伤增长速率的加快,这和e指数损伤增长规律相符. 关键词： 损伤增长 亚表面缺陷 赫兹型裂纹 光场增强     

Review of a direct epitaxial approach to achieving micro-LEDs

There is a significantly increasing demand of developing augmented reality and virtual reality (AR and VR) devices, where micro-LEDs (μLEDs) with a dimension of ≤ 5 μ m are the key elements. Typically, μLEDs are fabricated by dry-etching technologies, unavoidably leading to a severe degradation in optical performance as a result of dry-etching induced damages. This becomes a particularly severe issue when the dimension of LEDs is ≤ 10 μ m. In order to address the fundamental challenge, the Sheffield team has proposed and then developed a direct epitaxial approach to achieving μLEDs, where the dry-etching technologies for the formation of μLED mesas are not needed anymore. This paper provides a review on this technology and then demonstrates a number of monolithically integrated devices on a single chip using this technology.