Effect of Dopant Concentration in a Base Layer on Photocurrent——Voltage Characteristics of Photovoltaic Power Converters

It is known that the p–n junction of an absorption region is a crucial part for power conversion efficiency of photovoltaic power converters. We fabricate four samples with different dopant concentrations in base layers.The dependences of power conversion efficiency and fill factor on input power are displayed by photocurrent–voltage measurement. Photoluminescence characteristics under open circuit and connected circuit conditions are also studied. It is found that the status of p–n junction mat...     

界面生长中断对GaAs (111)衬底上AlGaAs/GaAs量子阱电子自旋寿命的影响

用固源分子束外延技术(SSMBE)在GaAs(111)衬底上,采用不同的界面中断时间生长了多组AlGaAs/GaAs多量子阱样品(MQWs),通过室温发光光谱和时间分辨克尔旋转谱(TRKR)研究了界面生长中断对发光光谱半峰全宽(FWHM)和量子阱中电子自旋弛豫时间(自旋寿命)的影响,发现了自旋寿命随着界面生长中断时间的增加呈现先减小后增加的趋势,此变化趋势与荧光光谱半峰全宽表征的材料质量随中断时间的变化一致,适当的界面生长中断时间能有效的增加GaAs (111)衬底上AlGaAs/GaAs 多量子阱中电子自旋寿命。     

Fabrication of 4-Inch Nano Patterned Wafer with High Uniformity by Laser Interference Lithography

We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions is characterized by a scanning electron microscope. The average size in each region ranges from 270 nm to 320 nm,and the deviation is almost 4%, which is approaching the applicable value of 3% in the industrial process. We simulate the two-beam laser interference lithography system with MATLAB software and then calculate the distribution of light intensity around the 4 inch area. The experimental data fit very well with the calculated results. Analysis of the experimental data and calculated data indicates that laser beam quality and space filter play important roles in achieving a periodical nanoscale pattern with high uniformity and large area. There is the potential to obtain more practical applications.     

Er∶Yb∶YCOB晶体制备及其激光二极管抽运激光特性

研究了Er∶Yb∶YCa4O(BO3)3(简称Er∶Yb∶YCOB)的多晶制备和单晶生长,用提拉法生长出光学质量优良的Er∶Yb∶YCOB单晶,测量了其吸收光谱和荧光光谱,分析了其能级和泵浦原理,并进行了以激光二极管为抽运源的激光试验,实现了Er∶Yb∶YCOB晶体的在1.55μm附近110mW的激光输出,且斜效率达18.9;.     

气源MBE外延自组装GeSi量子点光致荧光研究

利用气源分子束外延设备（MBE）制作了GeSi自组装量子点样品。利用原子力显微镜（AFM）和光致荧光（PL）光谱研究了量子点的形貌和光学性质。气源MBE在较低温度下生长的量子点材料具有较高的量子点覆盖度。200K以下载流子以局域激子形式束缚在量子点中,激子束缚能约为17meV。升温至200K,载流子的输运过程发生变化。对量子点PL积分强度与温度关系曲线进行拟合得到量子点中空穴跃迁至浸润层的热激活能为129meV。     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.     

气源MBE外延自组装GeSi量子点的光致荧光

利用气源分子束外延技术(MBE)制作了GeSi自组装量子点样品.利用原子力显微镜(AFM)和光致荧光(PL)光谱研究了该量子点的形貌和光学性质.气源MBE在较低温度下生长的量子点材料具有较高的量子点覆盖度.200K以下载流子以局域激子形式束缚在量子点中,激子束缚能约为17 meV.升温至200 K,载流子的输运过程发生...     

基于光纤布拉格光栅的智能服装人体测温模型研究

根据热量传递机理建立了智能服装中光纤布拉格光栅人体测温的热传递物理模型,对人体、空气层和服装之间的热传递进行了有限元建模和稳态热分析,确定了智能服装中光纤布拉格光栅温度场的数学模型,利用该数学模型对光纤布拉格光栅测量温度值进行了修正.在多点加权皮肤平均温度的基础上,提出了由左右胸、左右腋和后背五处皮肤温度构成的智能服装...     

使用AlN/GaN超晶格势垒层生长高Al组分AlGaN/GaN HEMT结构

在蓝宝石衬底上生长了以AlN/GaN超晶格准AlGaN合金作为势垒的HEMT结构材料,并与传统AlGaN合金势垒样品进行了对比.在高Al组分(≥40%)情况下,超晶格势垒样品的表面形貌明显改进,电学性能特别是2DEG面电子浓度也有所改进.对超晶格势垒生长参数进行了初步优化,使得HEMT结构薄层电阻进一步降低,最后获得了251 Ω/□的薄层电阻. 关键词： AlGaN/GaN 结构 AlN/GaN超晶格 二维电子气 高电子迁移率晶体管     

基于排队的两类顾客易逝品库存控制策略研究

本文采用排队理论在面向两类顾客需求的环境下讨论易逝品库存排队系统控制策略问题。首先刻画面向两类顾客服务且具有马尔科夫结构的易逝品库存系统排队模型,获得库存水平状态的稳态概率分布以及作为库存成本控制的系统稳态性能指标。接下来,构建库存控制成本函数及考虑服务水平约束的库存控制优化模型,设计了改进的遗传算法。最后,数值算例揭示出系统参数的敏感性和相应的管理启示。