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The structure of Au/Si/SiO2/p-Si has been fabricated using the magnetron sputtering technique. It has a very good rectifying behaviour. Visible electroluminescence (EL) has been observed from the Au/Si/SiO2/p-Si structure at a forward bias of 5V or larger. A broad band with one peak around 650-660 nm appears in all the EL spectra of the structure. The effects of the thickness of the Si layer in the Si/SiO2 films and of the input electrical power on EL spectra are studied systematically. 相似文献
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Ge/SiO_2 and Si/SiO_2 films were deposited using the two-target alternation magnetron sputtering technique. The Au/Ge/SiO_2/p-Si and Au/Si/SiO_2/p-Si structures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both Au/Ge/SiO_2/p-Si and Au/Si/SiO_2/p-Si structures have rectifying property. All the EL spectra from the two types of the structure have peak positions around 650-660 nm. The EL mechanisms of the structures are discussed. 相似文献
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