Superconductivity of bilayer titanium/indium thin film grown on SiO_2/Si(001)

Bilayer superconducting films with tunable transition temperature(Tc) are a critical ingredient to the fabrication of high-performance transition edge sensors. Commonly chosen materials include Mo/Au, Mo/Cu, Ti/Au, and Ti/Al systems. Here in this work, titanium/indium(Ti/In) bilayer superconducting films are successfully fabricated on SiO_2/Si(001)substrates by molecular beam epitaxy(MBE). The success in the epitaxial growth of indium on titanium is achieved by lowering the substrate temperature to-150?C during indium evaporation. We measure the critical temperature under a bias current of 10 μA, and obtain different superconducting transition temperatures ranging from 645 m K to 2.7 K by adjusting the thickness ratio of Ti/In. Our results demonstrate that the transition temperature decreases as the thickness ratio of Ti/In increases.     

Design,fabrication, and characterization of Ti/Au transition-edge sensor with different dimensions of suspended beams

For photon detection, superconducting transition-edge sensor (TES) micro-calorimeters are excellent energy-resolving devices. In this study, we report our recent work in developing Ti-/Au-based TES. The Ti/Au TES devices were designed and implemented with a thickness ratio of 1:1 and different suspended structures using micromachining technology. The characteristics were evaluated and analyzed, including surface morphology, 3D deformation of suspended Ti/Au TES device structure, I-V characteristics, and low-temperature superconductivity. The results showed that the surface of Ti/Au has good homogeneity and the surface roughness of Ti/Au is significantly increased compared with the substrate. The structure of Ti/Au bilayer film significantly affects the deformation of suspended devices, but the deformation does not affect the I-V characteristics of the devices. For devices with the Ti/Au bilayer (150μm×150μm) and beams (100μm×25μm), the transition temperature (T_c) is 253 mK with a width of 6 mK, and the value of the temperature sensitivity α is 95.1.     

基于应力分析的电镀保护光纤布喇格光栅传感性能分析(英文)

为保护光纤光栅,提出了一种镀层和光纤光栅结合良好的无粗化过程的化学镀和电镀保护方法.基于应力分析法,得到镀镍光纤光栅的温度灵敏度公式,采用ANSYS有限元软件分析了电镀后光纤光栅应力随温度变化关系,并进行了实验证实.结果表明:光纤光栅电镀后温度灵敏度理论和实验值分别为20.6951pm/℃、22.076pm/℃.理论分析和实验、仿真结果基本一致.相比裸光纤光栅,温度灵敏度增加到原来的2.2倍.该方法不仅可以获得厚度理想的保护层,还可以提高光纤光栅的温度灵敏度.     

被动法高浓铀年龄测量技术研究

利用HPGe-γ谱仪测量了多个年龄段的HEU样品, 获得了样品中N(214Bi)/N(234U)的值, 从而计算得到了HEU的年龄,其测量结果与参考值吻合较好。最后结合实验结果,系统分析了其它可能用于测量高浓铀年龄的方法,并对各种方法的可行性进行了分析。 结果表明, 214Bi/234U比值法是最佳的选择。N(231Pa)/N(235U)法中对γ谱如何解谱还需作进一步研究。 The HEU sample was measured by HPGe- γ spectrometry. By analyzing the detected γ spectrum, the N(214Bi)/N(234U) of the HEU sample was acquired, and the age of HEU samples was determined, which was coincided with the reference value. At last, the other potential methods of determining the age of HEU were analyzed systematically. N(214Bi)/N(234U) is more feasible,and algorithm of spectrum decomposition in N(231Pa)/N(235U) should be studied further.