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Controlled growth and field emission of vertically aligned AlN nanostructures with different morphologies 下载免费PDF全文
The controllable growth of three different morphologies of AlN
nanostructures (nanorod, nanotip and nanocrater) arrays are
successfully realized by using chemical vapour deposition (CVD)
technology. All three nanostructures are of single crystal h-AlN
with a growth orientation of [001]. Their growth is attributed to
the vapour-liquid-solid (VLS) mechanism. To investigate the factors
affecting field emission (FE) properties of AlN nanostructures, we
compare their FE behaviours in several aspects. Experimental results
show that AlN nanocrater arrays possess the best FE properties, such
as a threshold field of 7.2~V/μm and an emission current
fluctuation lower than 4%. Moreover, the three AlN nanostructures
all have good field emission properties compared with a number of
other excellent cathode nanomaterials, which suggests that they are
future promising FE nanomaterials. 相似文献
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No-catalyst growth of vertically-aligned AlN nanocone field electron emitter arrays with high emission performance at low temperature 下载免费PDF全文
The AlN nanostructures with a wide band-gap of 6.28 eV are considered as ideal cold cathode materials because of their low electron-affinity. Many methods have been devoted to fabricating AlN nanostructures, but high growth temperature over 800°C and the use of the catalysts in most methods limit their practical application and result in their poor field-emission behaviours in uniformity. This paper reports that without any catalysts, a simple chemical vapour deposition method is used to synthesize aligned AlN nanocone arrays at 550°C on silicon substrate or indium tin oxide glass. Field emission measurements show that these nanocones prepared at low temperature have an average turn-on field of 6 V/μm and a threshold field of 11.7 V/μm as well as stable emission behaviours at high field, which suggests that they have promising applications in field emission area. 相似文献
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