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Schottky Barrier Height Modulation of Nickel Germanide Schottky Diodes by the Germanidation-Induced Dopant Segregation Technique 下载免费PDF全文
Modulation of Schottky barrier height (SBH) is successfully demonstrated by a germanidation-induced dopant segregation technique. The barrier height of NiGe/Ge Schottky diodes is modulated by 0.06-0.15 eV depending on annealing temperature. The results show the change of SBH is not attributed to the phase change of nickel germanides but to dopant segregation at the interface of germanides/germanium which causes the upward conduction energy band. In addition, we first observe a Raman peak at about 217cm^-1 corresponding to NiGe, which has not been reported till now. The surface morphology of nickel germanides can be improved by BF2 implantation before germanidation. The results may provide guidelines for the design of Sehottky source/drain germanium-based devices. 相似文献
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The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique 下载免费PDF全文
This paper reports that the Schottky barrier height modulation of
NiSi/n-Si is experimentally investigated by adopting a novel
silicide-as-diffusion-source technique, which avoids the damage to
the NiSi/Si interface induced from the conventional dopant
segregation method. In addition, the impact of post-BF2 implantation
after silicidation on the surface morphology of Ni silicides is also
illustrated. The thermal stability of Ni silicides can be improved
by silicide-as-diffusion-source technique. Besides, the electron
Schottky barrier height is successfully modulated by 0.11~eV at a
boron dose of 1015~cm-2 in comparison with the
non-implanted samples. The change of barrier height is not
attributed to the phase change of silicide films but due to the
boron pile-up at the interface of NiSi and Si substrate which causes
the upward bending of conducting band. The results demonstrate the
feasibility of novel silicide-as-diffusion-source technique for the
fabrication of Schottky source/drain Si MOS devices. 相似文献
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