In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

We demonstrate the in situ growth of ultra-thin InA s nanowires with an epitaxial Al film by molecular-beam epitaxy.Our InAs nanowire diameter(～30 nm) is much thinner than before(～100 nm).The ultra-thin InAs nanowires are pure phase crystals for various different growth directions.Transmission electron microscopy confirms an atomically abrupt and uniform interface between the Al shell and the InAs wire.Quantum transport study on these devices resolves a hard induced superconducting gap and 2 e-p...     

Hard Superconducting Gap in Pb Te Nanowires

<正>Semiconductor nanowires coupled to a superconductor provide a powerful testbed for quantum device physics such as Majorana zero modes and gate-tunable hybrid qubits. The performance of these quantum devices heavily relies on the quality of the induced superconducting gap. A hard gap,