排序方式: 共有1条查询结果,搜索用时 15 毫秒
1
1.
Comparative studies of Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate 下载免费PDF全文
Ge and Si p-channel metal--oxide--semiconductor
field-effect-transistors (p-MOSFETs) with hafnium silicon oxynitride
(HfSiON) gate dielectric and tantalum nitride (TaN) metal gate are
fabricated. Self-isolated ring-type transistor structures with two
masks are employed. W/TaN metal stacks are used as gate electrode
and shadow masks of source/drain implantation separately.
Capacitance--voltage curve hysteresis of Ge metal--oxide--semiconductor
(MOS) capacitors may be caused by charge trapping centres in
GeO7340Q, 7325 http://cpb.iphy.ac.cn/CN/10.1088/1674-1056/19/5/057302 https://cpb.iphy.ac.cn/CN/article/downloadArticleFile.do?attachType=PDF&id=111774 Ge substrate, transistor, HfSiON, hole mobility Project supported by the National
Basic Research Program of China (Grant No.~2006CB302704). Ge and Si p-channel metal--oxide--semiconductor
field-effect-transistors (p-MOSFETs) with hafnium silicon oxynitride
(HfSiON) gate dielectric and tantalum nitride (TaN) metal gate are
fabricated. Self-isolated ring-type transistor structures with two
masks are employed. W/TaN metal stacks are used as gate electrode
and shadow masks of source/drain implantation separately.
Capacitance--voltage curve hysteresis of Ge metal--oxide--semiconductor
(MOS) capacitors may be caused by charge trapping centres in
GeO$_{x}$ ($1Ge;substrate;transistor;HfSiON;hole;mobility Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors(p-MOSFETs) with hafnium silicon oxynitride(HfSiON) gate dielectric and tantalum nitride(TaN) metal gate are fabricated.Self-isolated ring-type transistor structures with two masks are employed.W/TaN metal stacks are used as gate electrode and shadow masks of source/drain implantation separately.Capacitance-voltage curve hysteresis of Ge metal-oxide-semiconductor(MOS) capacitors may be caused by charge trapping centres in GeOx(1 < x < 2).Effective hole mobilities of Ge and Si transistors are extracted by using a channel conductance method.The peak hole mobilities of Si and Ge transistors are 33.4 cm2/(V.s) and 81.0 cm2/(V.s),respectively.Ge transistor has a hole mobility 2.4 times higher than that of Si control sample. 相似文献
1