全三维电离粒子有源像素探测器优化仿真

提出了一种双外延高能离子注入的单片集成有源像素探测器的传感器结构,以提升传感器对电荷的收集性能和辐射加固,并进行了三维工艺模拟和物理级器件仿真计算.研究结果表明,所提出的传感器结构改善了内部电场和电势的分布,且目标电极的电荷收集效率提高70%,电荷收集时间减少64%.此外,当等效中子辐射流通量在1012—1015cm-2范围内时,所提出的传感器结构比标准传感器结构有更高的电荷收集能力.     

A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor(UMOSFET) integrated with a Schottky rectifier is proposed.In this device,a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET.Specific on-resistances of 7.7 m.mm 2 and 6.5 m.mm 2 for the gate bias voltages of 5 V and 10 V are achieved,respectively,and the breakdown voltage is 61 V.The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET.