High-Quality InSb Grown on Semi-Insulting GaAs Substrates by Metalorganic Chemical Vapor Deposition for Hall Sensor Application

High-quality InSb epilayers are grown on semi-insulting GaAs substrates by metalorganic chemical vapor deposition using an indium pre-deposition technique. The influence of Ⅴ/Ⅲ ratio and indium pre-deposition time on the surface morphology, crystalline quality and electrical properties of the InSb epilayer is systematically investigated using Nomarski microscopy, atomic force microscopy, high-resolution x-ray diffraction, Hall measurement and contactless sheet resistance measurement. It is found that a 2-μm-thick InSb epilayer grown at 450℃ with a Ⅴ/Ⅲ ratio of 5 and an indium pre-deposition time of 2.5s exhibits the optimum material quality, with a root-meansquare surface roughness of only 1.2 nm, an XRD rocking curve with full width at half maximum of 358 arcsec and a room-temperature electron mobility of 4.6 × 10~4 cm~2/V·s. These values are comparable with those grown by molecular beam epitaxy. Hall sensors are fabricated utilizing a 600-nm-thick InSb epilayer. The output Hall voltages of these sensors exceed 10 mV with the input voltage of 1 V at 9.3 mT and the electron mobility of 3.2 × 10~4 cm~2/V·s is determined, which indicates a strong potential for Hall applications.     

绿色单峰发光聚(9,9-二烯丙基芴)的合成及其发光机制

为了得到绿色单峰发光的聚合物材料, 我们设计并合成了9位取代的二烯丙基芴单体, 在NiCl₂的催化下, 合成了可溶的聚芴衍生物, 聚(9,9-二烯丙基芴)(PAF). 较短的烯丙基链既可以增加聚芴的溶解度, 双键的存在又有利于聚芴发生分子间聚集而得到绿光发射的有机电致发光器件(OLED). PAF在溶液和薄膜状态下的荧光峰分别位于403和456 nm的蓝光区域, 而其器件ITO/PEDOT:PSS/PAF/LiF/Al(其中, ITO为氧化铟锡, PEDOT为聚(3,4-乙撑二氧噻吩), PSS为聚苯乙烯磺酸盐)的电致发光峰却红移至绿光区域(532 nm), 得到绿色单峰发光. 紫外吸收光谱、荧光发射光谱、红外光谱以及原子力显微镜(AFM)图像的结果证明, 造成PAF电致发绿光的机制为聚合物分子间聚集.