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CMP流场的数值模拟及离心力影响分析 总被引:1,自引:0,他引:1
化学机械抛光(chemical mechanical polishing,CMP)是一项融合化学分解和机械力学的工艺, 其中包含了流体动力润滑的作用.在已有润滑方程的基础上, 提出并分析了带有离心力项的润滑方程.利用Chebyshev加速超松弛技术对有离心力项的润滑方程进行求解,得到离心力对抛光液压力分布的影响. 数值模拟结果表明,压力分布与不带离心力项的润滑方程得出的明显不同;无量纲载荷和转矩随中心膜厚、转角、倾角、抛光垫旋转角速度等参数的变化趋势相同,但数值相差较大, 抛光垫旋转角速度越大差别越大. 相似文献
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以超声速HF/DF化学激光和超声速氧碘化学激光(COIL)为代表的气流化学激光(GCL), 因其科学意义、军事和工业应用价值,近30多年来得到了突飞猛进的发展.由于超声速膨胀混合流在控制强放热反应动力学和热力学过程方面的特殊本领,使气体动力学在高功率GCL的发展中起着关键性的作用.高功率GCL性能的分析计算自然也沿用非平衡气体动力学的方法,假定气流(包括激光能级分子和原子)为连续介质,谱线为均匀加宽,并联立求解气体动力学方程组,增益动力学和基于光强迭加原则的辐射传输诸方程,称为速率方程(RE)模型.20世纪70年代后期又提出和发展了GCL性能计算的半气体动理学(SGK)模型,在SGK模型中仍假定气流为连续介质,但同时考虑了激光能级分子微观热运动的贡献,谱线加宽的非均匀加宽效应,并用双参数摄动法求解激光能级分子速度分布函数方程组(即广义Boltzmann方程组), 因此SGK模型是一个同时考虑宏观和微观尺度运动的跨尺度模型.本文综述RE模型和SGK模型以及用它们预测GCL性能的若干研究进展,同时简评等增益模型和腔模(模图样)理论研究的一些进展.最后从气体动力学的角度提出一些值得 进一步研究的课题. 相似文献
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Effects of the Spectral Line Broadened Model on the Performance of a Floing Chemical Oxygen—Iodine Laser 下载免费PDF全文
A new gain saturation model of chemical oxygen-iodine lasers(COILs)is deduced from from the conservation equations of the population number of upper and lower lasing levels,The present model is compared with both the Voigt profile function model and its low-pressure limit model.The differences between the Voigt profile function model or its low-pressure limit model and the model presented here are pointed out,such as the length of power extraction,the optimal range of the thershold gain.These differences are useful for the optimization of COIL adjustable parameters. 相似文献
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A novel voltage-withstand substrate with high-K (HK, k>3.9, k is the relative permittivity) dielectric and low specific on-resistance (Ron,sp) bulk-silicon, high-voltage LDMOS (HKLR LDMOS) is proposed in this paper. The high-K dielectric and highly doped interface N+-layer are made in bulk silicon to reduce the surface field drift region. The high-K dielectric can fully assist in depleting the drift region to increase the drift doping concentration (Nd) and reshape the electric field distribution. The highly doped N+-layer under the high-K dielectric acts as a low resistance path to reduce the Ron,sp. The new device with the high breakdown voltage (BV), the low Ron,sp, and the excellent figure of merit (FOM=BV2/Ron,sp) is obtained. The BV of HKLR LDMOS is 534 V, Ron,sp is 70.6 mΩ·cm2, and FOM is 4.039 MW·cm-2. 相似文献
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