Electronic and optical properties of Au-doped Cu_2O:A first principles investigation

The Cu2O and Au-doped Cu2O films are prepared on MgO(001) substrates by pulsed laser deposition. The X-ray photoelectron spectroscopy proves that the films are of Au-doped Cu2O. The optical absorption edge decreases by 1.6%after Au doping. The electronic and optical properties of pure and Au-doped cuprite Cu2O films are investigated by the first principles. The calculated results indicate that Cu2O is a direct band-gap semiconductor. The scissors operation of 1.64 eV has been carried out. After correcting, the band gaps for pure and Au doped Cu2O are about 2.17 eV and2.02 eV, respectively, decreasing by 6.9%. All of the optical spectra are closely related to the dielectric function. The optical spectrum red shift corresponding to the decreasing of the band gap, and the additional absorption, are observed in the visible region for Au doped Cu2O film. The experimental results are generally in agreement with the calculated results.These results indicate that Au doping could become one of the more important factors influencing the photovoltaic activity of Cu2O film.     

同质外延生长ZnO单晶结构及光电性能的研究

本文报道了同质外延生长氧化锌(ZnO)单晶在高温氧气气氛退火前后的结构及光电特性.利用化学气相输运(CVT)法生长了红棕色的ZnO单晶,且进行高温氧气气氛退火处理后的ZnO单晶呈现无色透明状.通过X射线衍射仪(XRD)、X射线光电子能谱(XPS)、能谱仪(EDS)和拉曼(Raman)光谱测试分析了高温氧气气氛退火前后的...     

氨水-六甲基二硅胺烷对SiO2化学膜环境稳定性的影响

针对溶胶-凝胶技术制的单层SiO₂化学膜，在室温下研究氨水-六甲基二硅胺烷（HMDS）气氛的量对膜层改性的影响，并在低真空条件下测试了其抗邻苯二甲酸二丁酯（DBP）污染性能。采用紫外-可见-近红外分光光度计（UV-Vis-NIR）、红外光谱仪和原子力显微镜分析了改性前后化学膜特性的演变。研究结果表明:经过DBP污染后，15～30 mL氨水-HMDS改性后化学膜的峰值透过率为99.8%，较改性前化学膜的峰值透过率提升了3.5%，此时化学膜表现出优异的抗污染特性。但是，随着氨水-HMDS处理量的进一步增多，化学膜的激光损伤阈值由改性前的的24.32 J/cm2降到19.36 J/cm2。本研究有助于优化改性参数，以提高化学膜的抗污染性能，在实际工程应用中具有重要的价值。