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用磁控溅射方法制备了两个具有不同Fe层厚度的[Ni80Co20(L)/Fe(tFe)]N多层膜系列样品,其中tFe=0.1和2nm.研究了两个系列样品的磁及输运性质随Ni80Co20层厚度L的变化关系.在退火态[Ni80Co20(L)/Fe(0.1nm)]N系列样品中,发现各向异性磁电阻(AMR)和横向磁电阻(TMR)在L为10nm附近存在一较宽的增强峰,其峰位与制备态[Ni80Co20(L)/Fe(2nm)]25多层膜TMR的增强峰位一致.当L小于Ni80Co20合金的电子平均自由程时,制备态[Ni80Co20(L)/Fe(0.1nm)]N样品的各向异性磁电阻(Δρ)和零场电阻率ρ都随L的减小而增加,且ρ的增量超过Δρ的增量.ρ随L的依赖关系可采用Fuchs-Sondheimer理论描述.在L小于10nm时,制备态界面掺杂[Ni80Co20(L)/Fe(0.1nm)]N系列样品的矫顽力Hc随L近似直线上升,在L大于10nm后趋于饱和.退火后Hc显著下降.实验结果表明,在多层膜结构中,界面散射可导致ρ和Δρ的增强;磁性合金界面层还可导致畴结构的改变及TMR和AMR的增强. 相似文献
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Magnetic Force Microscopy Study of Alternate Sputtered (001) Oriented L1o Phase FePt Films 下载免费PDF全文
We present a magnetic force microscopy study of alternate sputtered (001) oriented L1o phase FePt films. It is found that the root-mean-square value of phase shift of magnetic force images, ( △Ф)rms, can be used to characterize the perpendicular anisotropy for a series of specimens. Therefore, the considerable improvement of the perpendicular anisotropy after post-annealing can be characterized. In addition, the magnetic properties, magnetic and crystalline microstructures before and after post-annealing are compared for the typical [Fe5nm Pt5 nm]10 film with substrate temperature T8 = 500℃, single layer thickness d = 5 nm and total layer thickness D=100 nm to confirm the effect of post-annealing on improving the perpendicular anisotropy for Fe-Pt films. 相似文献
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