Optoelectronic properties of bottom gate-defined in-plane monolayer WSe_2 p–n junction

Monolayer transition-metal dichalcogenides(TMDs) are considered to be fantastic building blocks for a wide variety of optical and optoelectronic devices such as sensors, photodetectors, and quantum emitters, owing to their direct band gap,transparency, and mechanical flexibility. The core element of many conventional electronic and optoelectronic devices is the p–n junction, in which the p-and n-types of the semiconductor are formed by chemical doping in different regions.Here, we report a series of optoelectronic studies on a monolayer WSe_2 in-plane p–n photodetector, demonstrating a lowpower dissipation by showing an ambipolar behavior with a reduced threshold voltage by a factor of two compared with the previous results on a lateral electrostatically doped WSe_2 p–n junction. The fabrication of the device is based on a polycarbonates(PC) transfer technique and hence no electron-beam exposure induced damage to the monolayer WSe_2 is expected. Upon optical excitation, the photodetector demonstrates a photoresponsivity of 0.12 mA·W~(-1) and a maximum external quantum efficiency of 0.03%. Our study provides an alternative platform for a flexible and transparent twodimensional photodetector, from which we expect to further promote the development of next-generation optoelectronic devices.     

Gap plasmon-enhanced photoluminescence of monolayer MoS_2 in hybrid nanostructure

Monolayer transition-metal dichalcogenides(TMDs) have attracted a lot of attention for their applications in optics and optoelectronics.Molybdenum disulfide(MoS_2),as one of those important materials,has been widely investigated due to its direct band gap and photoluminescence(PL) in visible range.Owing to the fact that the monolayer MoS_2 suffers low light absorption and emission,surface plasmon polaritons(SPPs) are used to enhance both the excitation and emission efficiencies.Here,we demonstrate that the PL of MoS_2 sandwiched between 200-nm-diameter gold nanoparticle(Au NP) and 150-nm-thick gold film is improved by more than 4 times compared with bare MoS_2 sample.This study shows that gap plasmons can possess more optical and optoelectronic applications incorporating with many other emerging two-dimensional materials.     

Enhancement of the second harmonic generation from monolayer WS2 coupled with a silica microsphere

Monolayer transition metal dichalcogenides (TMDs) are widely used for integrated optical and photoelectric devices. Owing to their broken inversion symmetry, monolayer TMDs have a large second-order optical nonlinearity. However, the optical second-order nonlinear conversion efficiency of monolayer TMDs is still limited by the interaction length. In this work, we theoretically study the second harmonic generation (SHG) from monolayer tungsten sulfide (WS₂) enhanced by a silica microsphere cavity. By tuning the position, size, and crystal orientation of the material, second-order nonlinear coupling can occur between the fundamental pump mode and different second harmonic cavity modes, and we obtain an optimal SHG conversion efficiency with orders of magnitude enhancement. Our work demonstrates that the microsphere cavity can significantly enhance SHG from monolayer 2D materials under flexible conditions.     

超薄二维材料非线性量子光源

<正>随着量子科学的不断发展，量子系统的规模也在不断扩大。相比传统的空间量子光学系统，集成量子光学系统能够稳定支持大规模量子系统，是量子科学未来发展的重要方向。集成量子光学系统由多个部分组成，其中为系统提供量子资源的部分是集成量子光源。现有量子光源主要分为三类：衰减相干脉冲单光子源、确定性单光子源和自发非线性过程产生的时间关联光源。