排序方式: 共有29条查询结果,搜索用时 15 毫秒
1.
2.
3.
很多学者現在正在研究一种新方法:从气相反应直接获得具有任意純度的半导体晶体。这种过程将使半导体二极管和高頻晶体管的生产工艺簡化。在得到这种半导体的反应中,二个碘化鍺分子在晶核表面起反应,而形成一个四碘化鍺分子和一个鍺原子: 相似文献
4.
用Gaussian98程序,在相对论有效原子实势(RECP)近似下,用密度泛函(B3LYP/SDD)方法计算得到了PdCO分子结构,分子的力学和光谱性质.结果表明PdCO的基态为1Σ+,基态离解能为 17.258?8?eV.谐振频率为υ1(σ)=2110.859?5?cm-1,υ2(π)=260.562?8?cm-1,υ3(σ)=456.563?1?cm-1;力常数为f11=1.139?22 (a.u.), f12=0.037?248?1 (a.u.) , f22=0.178?47 (a.u.),fαα=0.042?388 (a.u.).转动常数为0.113?1 cm-1,零点振动能为18.474?5 (KJ/Mol). 相似文献
5.
6.
改进了有限差分格子Boltzmann方法(FDLBM),以直接数值模拟气动噪声.基于LB求解器特性,采用动力学方程中的恒定对流速度以实施高阶迎风差分,提高了声波和湍流的分辨率.通过建立一个新的三维粒子模型,计算得到了任意比热容的三维可压缩Navier-Stokes系统.此外,利用Bhatnagar-Gross-Krook (BGK)碰撞算子,通过引入热流量修正,实现了Prandtl数的可变性.在激波管内弱声波以及伴随有温度梯度的Taylor-Couette层流的验证计算中,提出的新方法结果良好.此外也对NACA0012翼型绕流进行了三维模拟.其中,Reynolds数、Mach数和攻角分别取2× 105,8.75×10-2以及9°.计算发现,在机翼前缘附近的分离气流位置,以及表面压力波动强度的Maeh数依赖性方面,数值计算结果与实验结果相吻合. 相似文献
7.
The β- decaying γ scheme of the neutron-rich nuclide 208Hg has been determined for the first time.The 208 Hg was produced in multi-nucleon transfer reaction taking place in the bombardment of 18O-beam on natural lead target,and the Hg-element products were sepaated with a gas-thermochromatography technique.The γ-ray single and γ-γ coincident spectra were measured.A partial 208 Hg γ scheme was proposed.Twenty-six γ rays were assigned to follow the β- decay of 208Hg.At the same time,a new level structure of the daughter nucleus 208 T1 was constructed,in which three new levels at 1.725MeV.1.652MeV,and 1.362MeV were affirmed.The experimental 208Tl level structure was compared with a shell-model calculation. 相似文献
8.
溶胶-凝胶法制备金属铂高分散的二氧化钛薄膜 总被引:11,自引:0,他引:11
Uniform and crack free TiO 2 thin films with highly dispersed platinum were prepared from i PrOH TTIP DEA H 2O system containing H 2PtCl 6·6H 2O as metal source by sol gel method. The microstructure and morphology of the films were characterized by TEM and XRD respectively. It was found that the Pt particles dispersed in the films and had a homogeneous distribution in the shape of sphere with an average size of about 5 nm. This study also showed that the doping with few percent of Pt resulted in the formation of pure rutile phase at a temperature as low as 550 ℃, whereas the same pure phase was formed at the temperature higher than 650 ℃ in TiO 2 or Au/TiO 2 thin films. 相似文献
9.
氧化锌材料是新一代宽禁带光电子半导体材料,我们通过等离子体分子束外延设备,在a plane的蓝宝石衬底生长了高质量的氧化锌外延材料。在生长过程中用反射高能电子束衍射仪(RHEED),在位地研究了生长时材料薄膜的表面形貌。通过调节ZnMgO材料镁的组份,生长了禁带宽度可调的宽禁带材料。用紫外-可见透射光谱研究了ZnO,Zn0.89Mg0.11O和Zn0.80Mg0.20O薄膜材料的透射和吸收光谱性质,观察到Zn0.89Mg0.11O,Zn0.80Mg0.20O材料的吸收边的蓝移现象等。以上说明了我们用分子束外延生长 收稿日期:2003 07 22·09· 第1期StructuralandOpticalCharacterizationofZnOandZnMgOFilmsona-planesapphiresbyMolecularBeamEpitaxy2004年设备成功的生长了高质量的氧化锌和组份渐变的ZnMgO薄膜材料。 相似文献
10.
利用电感耦合等离子体(ICP)装置对分子束外延(MBE)法在Sapphire衬底上生长的Zn1-xMgxO薄膜的Mg组分进行了测试. 经理论分析,得到使用1次和2次检量式所确定的Zn1-xMgxO薄膜中的Mg组分的差异. 将采用1次检量式的ICP测定与EPMA测定结果进行对照,表明当Mg组分x≤0.5时二者的测试结果相当一致,由此证明ICP测试结果的正确性.
关键词:
ZnMgO薄膜
Mg组分
分子束外延(MBE)
电感耦合等离子体(ICP) 相似文献