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Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells
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Low temperature photoluminescence(PL) measurements have been performed for a set of GaN/AlxGa1-xN quantum wells(QWs). The experimental results show that the optical full width at half maximum(FWHM) increases relatively rapidly with increasing Al composition in the AlxGa1-xN barrier, and increases only slightly with increasing GaN well width. A model considering the interface roughness is used to interpret the experimental results. In the model, the FWHM’s broadening caused by the interface roughness is calculated based on the triangle potential well approximation. We find that the calculated results accord with the experimental results well. 相似文献
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Effects of polarization on intersubband transitions of Al_xGa_(1-x)N/GaN multi-quantum wells
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The effects of polarization and related structural parameters on the intersubband transitions of AlGaN/GaN multiquantum wells (MQWs) have been investigated by solving the Schrdinger and the Poisson equations self-consistently. The results show that the intersubband absorption coefficient increases with increasing polarization while the transition wavelength decreases, which is not identical to the case of the interband transitions. Moreover, it suggests that the well width has a greater effect on the intersubband transitions than the barrier thickness, and the intersubband transition wavelength of the structure when doped in the barrier is shorter than that when doped in the well. It is found that the influences of the structural parameters differ for different electron subbands. The mechanisms responsible for these effects have been investigated in detail. 相似文献
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Effects of interface roughness on photoluminescence full width at half maximum in GaN/AIGaN quantum wells
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Low temperature photoluminescence (PL) measurements have been performed for a set of GaN/AlxGal xN quantum wells (QWs). The experimental results show that the optical full width at half maximum (FWHM) increases relatively rapidly with increasing A1 composition in the AlxGal xN barrier, and increases only slightly with increasing GaN well width. A model considering the interface roughness is used to interpret the experimental results. In the model, the FWHM's broadening caused by the interface roughness is calculated based on the triangle potential well approximation. We find that the calculated results accord with the experimental results well. 相似文献
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