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1.
采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1.6—1.7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术,得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱,加入了载流子阻挡层改善器件的温度特性.1.66μm和1.74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA),输出功率高(100mA时大于14mW).从10—40℃,1.74μm激光器的特征温度T0=57K,和1.55μm InGaAsP分布反馈激光器的特征温度相当. 关键词: MOCVD InGaAs/InGaAsP 应变量子阱 分布反馈激光器  相似文献   
2.
为寻找高效与低毒的吡唑肟活性物质,设计合成了9个未见文献报道的新型吡唑肟化合物,通过1H NMR、13C NMR及元素分析等方法确证了其目标物的结构。初步生物活性测试数据显示,在500µg/mL浓度下,目标化合物6a~6i对粘虫均有较好的杀虫效果,其杀死率均为100%,与对照药啶虫丙醚的防效相当,值得进一步深入研究。  相似文献   
3.
A polarization-insensitive semiconductor optical amplifier (SOA) with a very thin active tensile-strained InGaAs bu/k has been fabricated.The polarization sensitivity of the amplifier gain is less than 1 dB over both the entire range of driving current and the 3dB optical bandwidth of more than 8Onto.For optical signals of 1550nm wavelength,the SOA exhibits a high saturation output power 7.6dBm together with a low noise figure of 7.SdB, fibre-to-fibre gain of 11.5dB,and low polarization sensitivity of 0.5dB.Additionally,at the gain peak 1520nm,the fibre-to-fibre gain is measured to be 14.1 dB.  相似文献   
4.
A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-Ⅲ trimethylgallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.  相似文献   
5.
By partially doping Pb to effectively suppress the superstructure in single-layered cuprate Bi_2Sr_2CuO_(6+δ)(Pb-Bi2201) and annealing them in vacuum or in high pressure oxygen atmosphere, a series of high quality Pb-Bi2201 single crystals are obtained with T_c covering from 17 K to non-superconducting in the overdoped region. High resolution angle resolved photoemission spectroscopy measurements are carried out on these samples to investigate the evolution of the Fermi surface topology with doping in the normal state. Clear and complete Fermi surfaces are observed and quantitatively analyzed in all of these overdoped Pb-Bi2201 samples. A Lifshitz transition from holelike Fermi surface to electron-like Fermi surface with increasing doping is observed at a doping level of ~0.35. This transition coincides with the change that the sample undergoes superconducting-to-non-superconducting states.Our results reveal the emergence of an electron-like Fermi surface and the existence of a Lifshitz transition in heavily overdoped Bi2201 samples. This provides important information in understanding the connection between the disappearance of superconductivity and the Lifshitz transition in the overdoped region.  相似文献   
6.
不同年份的化橘红功效和价格均存在差异,为了快速识别未知橘红样品的年份,采用电子舌对2001~2010年的10个样品和一个盲样进行了分析.对原始数据采用主成分分析和判别因子分析.结果表明:主成分分析可以将不同年份的样品进行有效的区分,判别因子分析可以更好地区分不同年份的样品,并能进行盲样识别.在模式识别中,判别因子分析法的识别结果均优于主成分分析法,前者2个判别因子的累计方差贡献量达到了99.929%.电子舌可以较好地区分不同年份的化橘红,改进后有望应用于化橘红的快速检测.  相似文献   
7.
Using non-identical quantum wells as the active material, a new distributed-feedback laser is fabricated with period varied Bragg grating. The full width at half maximum of I 15 nm is observed in the amplified spontaneous emission spectrum of this material, which is flatter and wider than that of the identical quantum wells. Two wavelengths of 1.51 μm and 1.53 μm are realized under different work conditions. The side-mode suppression ratios of both wavelengths reach 40 dB. This device can be used as the light source of coarse wavelength division multiplexer communication systems.  相似文献   
8.
烟碱的测量方法   总被引:20,自引:0,他引:20  
李德亮  赵瑾  丁颖  孙心齐 《化学通报》2002,65(3):174-178
归纳整理了国内外主要杂志近10年来报道的烟碱的分析方法,评价了各种方法的优缺点,并对烟碱测量方法的发展前景提出了自己的看法。  相似文献   
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10.
讨论了以草酸二乙酯为原料 ,经过克莱森缩合、环合、氨解反应合成 5 甲基异唑 3 甲酰胺工艺的改进。各部收率均高于文献报道收率 ,总收率由原工艺的 40 %提高到现工艺的 57%。  相似文献   
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