Spectroscopic ellipsometric properties and resistance switching behavior in Si_x（ZrO_2）_（100-x） films

We prepare Si x (ZrO 2 ) 100 x composite films using the co-sputtering method. The chemical structures of the films which are prepared under different conditions are analyzed with X-ray photoemission spectroscopy. Thermal treatment influences on optical property and resistance switching characteristics of these composite films are investigated by spectroscopic ellipsometry and semiconductor parameter ana- lyzer, respectively. With the proper Si-doped Si x (ZrO 2 ) 100 x interlayer, the Al/ Si x (ZrO 2) 100 x /Al device cell samples present very reliable and reproducible switching behaviors. It provides a feasible solution for easy multilevel storage and better fault tolerance in nonvolatile memory application.