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To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications,a simple chemical cleaning and surface passivation scheme is introduced,and Ge p-MOSFETs with effective channel hole mobility up to665 cm2/V·s are demonstrated on a Ge(111) substrate.Moreover,a physical model is proposed to explain the dipole layer formation at the metal–oxide–semiconductor(MOS) interface by analyzing the electrical characteristics of HCl- and(NH4)2S-passivated samples. 相似文献
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High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation 下载免费PDF全文
The microwave plasma oxidation under the relatively high pressure(6 kPa)region is introduced into the fabrication process of SiO2/4 H-SiC stack.By controlling the oxidation pressure,species,and temperature,the record low density of interface traps(~4×1010cm-2·eV-1@Ec-0.2 eV)is demonstrated on SiO2/SiC stack formed by microwave plasma oxidation.And high quality SiO2 with very flat interface(0.27-nm root-mean-square roughness)is obtained.High performance Si C metal–oxide–semiconductor field-effect transistors(MOSFETs)with peak field effect mobility of 44 cm-2·eV-1is realized without additional treatment.These results show the potential of a high-pressure plasma oxidation step for improving the channel mobility in SiC MOSFETs. 相似文献
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从模拟和实验两个方面对高迁移率In0.6Ga0.4As沟道金属氧化物半导体高电子迁移率晶体管(MOSHEMT)和金属氧化物半导体场效应晶体管(MOSFET)器件开展研究工作.研宄发现InAlAs势垒层对Ino0.6Ga0.4AsMOSHEMT的特性具有重要影响.与Ino0.6Ga0.4As MOSFET相比,Ino0.6Ga0.4As MOSHEMT表现出优异的电学特性.实验结果表明,In0.6Ga0.4As MOSHEMT的有效沟道迁移率达到2812 cm2/V.s-1,是In0.6Ga0.4As MOSFET的3.2倍.0.02 mm栅长的MOSHEMT器件较相同栅长的MOSFET器件具有更高的驱动电流、更大的跨导峰值、更大的开关比、更高的击穿电压和更小的亚阈值摆幅. 相似文献
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Effect of the Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown on semi-insulating GaAs substrates 下载免费PDF全文
In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with and without an Si-doped In0.49Ga0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the first time. Compared with the In0.4Ga0.6As MOSFETs without an In0.49Ga0.51P barrier layer, In0.4Ga0.6As MOSFETs with an In0.49Ga0.51P barrier layer show higher drive current, higher transconductance, lower gate leakage current, lower subthreshold swing, and higher effective channel mobility. These In0.4Ga0.6As MOSFETs (gate length 2 μm) with an In0.49Ga0.51P barrier layer exhibit a high drive current of 117 mA/mm, a high transconductance of 71.9 mS/mm, and a maximum effective channel mobility of 1266 cm2/(V·s). 相似文献
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Effect of ultrathin GeO_x interfacial layer formed by thermal oxidation on Al_2O_3 capped Ge 下载免费PDF全文
We propose a modified thermal oxidation method in which an Al2O3 capping layer is used as an oxygen blocking layer (OBL) to form an ultrathin GeOx interracial layer, and obtain a superior Al2O3/GeOx/Ge gate stack. The GeOx interfacial layer is formed in oxidation reaction by oxygen passing through the Al2O3 OBL, in which theAl2O3 layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeOx interfacial layer would dramatically decrease as the thickness of Al2O3 OBL increases, which is beneficial to achieving an ultrathin GeOx interfacial layer to satisfy the demand for small equivalent oxide thickness (EOT). In addition, the thickness of the GeOx interfacial layer has little influence on the passivation effect of the Al2O3/Ge interface. Ge (100) p-channel metal- oxide-semiconductor field-effect transistors (pMOSFETs) using the Al2O3/GeOx/Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off (Ionloft) ratio of above 1 104, a subthreshold slope of - 120 mV/dec, and a peak hole mobility of 265 cm2/V.s are achieved. 相似文献
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To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications, a simple chemical cleaning and surface passivation scheme is introduced, and Ge p-MOSFETs with effective channel hole mobility up to 665 cm2/V.s are demonstrated on a Ge (111) substrate. Moreover, a physical model is proposed to explain the dipole layer formation at the metal-oxide-semiconductor (MOS) interface by analyzing the electrical characteristics of HCl- and (NH4)2S-passivated samples. 相似文献
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Designing high k dielectric films with LiPON—Al2O3 hybrid structure by atomic layer deposition 下载免费PDF全文
A large amount of ultra-low-power consumption electronic devices are urgently needed in the new era of the internet of things, which demand relatively low frequency response. Here, atomic layer deposition has been utilized to fabricate the ion polarization dielectric of the LiPON-Al2O3 hybrid structure. The LiPON thin film is periodically stacked in the Al2O3 matrix. This hybrid structure presents a frequency-dependent dielectric constant, of which k is significantly higher than the aluminum oxide matrix from 1 kHz to 200 kHz in frequency. The increased dielectric constant is attributed to the lithium ions shifting locally upon the applied electrical field, which shows an additional polarization to the Al2O3 matrix. This work provides a new strategy with promising potential to engineers for the dielectric constant of the gate oxide and sheds light on the application of electrolyte/dielectric hybrid structure in a variety of devices from capacitors to transistors. 相似文献
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