19F+27Al耗散反应中双核系统的转动与形变

测量了¹⁹F+²⁷Al耗散反应产物B,C,N,O,F和Ne的激发函数,入射束流的能量从110.25MeV到118.75MeV, 能量步长为250keV. 从产物的 能量自关联函数中提取了反应中所形成的中间双核系统的转动惯量, 与相粘模型计算的刚体转动惯量相比较, 结果表明形成的双核系统有大的形变.     

多元线性回归法在互联网网间结算中的应用

本文建立一个理论模型研究互联网互联结算的问题。文章利用多元线性回归法对互联网骨干网运营商(IBPs:Internet Backbone Providers)的网络价值进行评估,利用IBPs各自的网络价值对其交换速率进行加权,从而得出网络价值加权速率,依据这个速率进行结算既可以反映了每个网络对互联的贡献程度,又反映了在互联中对网络资源的被占用程度。     

19F+27Al深部非弹性碰撞产物的角分布

完成了19F+27Al深部非弹性碰撞产物的角分布测量.初步分析了反应产B,C,N,O,F,Ne,Na,Mg和Al的实验室系角分布,展现出深部非弹性反应机制的特点,显示了反应系统随时间的演化过程. Angular distributions of fragments produced in the deep inelastic collision of~(19)F+~(27)Al have been measured for incident energy of 114 MeV at θ_(lab)= 9~(o), 24~(o), 40~(o), 55~(o), 70~(o) and 85~(o). Angular distributions of dissipative products B, C, N, O, F, Ne, Na, Mg and Al are analyzed to provide an evolution process of the intermediate dinuclear system formed in the reaction.     

烷基季铵盐插层剂的合成及应用

Three novel intercalation agents were synthesized for the first time, which arose from oleic acid diethylenetriamine or triethylenetetramine 3 - chloro - 2 - hydroxypropy trimethylammonium choride (CHPTA) and chloroethanol. Organophilic vermicullites were synthesized from sodium type vermiculite by cation exchange with new intercalation agents. The results of X - ray diffraction study showed that the gallery distance of the organophilic vermiculite was enlarged from 1 nm to 5 nm or more. A new idea of making design for intercalation agent was provided.     

Compound buried layer SOI high voltage device with a step buried oxide

A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed.The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer.Furthermore,holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer.Consequently,the electric fields in both the thin LBO and the thick UBO are enhanced by these holes,leading to an improved breakdown voltage.The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer.Moreover,SBO CBL SOI can also reduce the self-heating effect.     

氧化镁中子过滤器研究

核电厂反应堆乏燃料水池格架材料在生产和使用过程中需要对其中子吸收性能进行监测和检测,针对这两方面需求,研制了乏燃料水池格架B₄C＿Al材料的中子吸收性能检测设备。为了降低检测过程中超热中子本底的影响,考虑采用氧化镁超热中子过滤器滤除超热中子。对10和5 cm氧化镁单晶的中子透射率与宏观总截面进行了理论计算,对慢化体表面中子成分进行蒙特卡罗模拟计算并开展实验测量。实验结果表明,10 cm氧化镁对采用8 cm聚乙烯慢化后的²⁵²Cf中子源的中子透射率为60.16%,相对镉比值比未加10 cm氧化镁时提高了93.85%,证明常温下采用氧化镁单晶做B₄C＿Al检测装置的超热中子过滤器是可行的。     

Performance of a double sided silicon strip detector as a transmission detector for heavy ions

The performance of a double sided silicon strip detector （DSSSD）, which is used for the position and energy detection of heavy ions, is reported. The analysis shows that although the incomplete charge collection （ICC） and charge sharing （CS） effects of the DSSSD give rise to a loss of energy resolution, the position information is recorded without ambiguity. Representations of ICC/CS events in the energy spectra are shown and their origins are confirmed by correlation analysis of the spectra from both the junction side and ohmic side of the DSSSD.     

横向外延过生长磷化铟材料的生长速率模型

分别考虑气相扩散和掩膜表面扩散过程，建立了金属有机化学气相沉积条件下横向外延过生长的速率模型. 在砷化镓衬底上外延磷化铟条件下，模拟得到了生长速率随掩膜/窗口宽度(m/w)变化的关系. 通过讨论掩膜/窗口宽度的影响，说明了掩膜宽度、窗口宽度以及有效掩膜宽度是决定生长速率的关键因素. 以上结论与实验结果一致. 关键词： 横向外延 生长模型 扩散 生长速率     

First-Principles Calculations of Electronic Structures of New Ⅲ-Ⅴ Semiconductors： BxGa1-xAs and TlxGa1-xAs alloys

We investigate the electronic structures of new semiconductor alloys BxGa1-xAs and TlxGa1-xAs, employing first-principles calculations within the density-functional theory and the generalized gradient approximation. The calculation results indicate that alloying a small TI content with GaAs will produce larger modifications of the band structures compared to B. A careful investigation of the internal lattice structure relaxation shows that significant bond-length relaxations takes place in both the alloys, and it turns out that difference between the band-gap bowing behaviours for B and TI stems from the different impact of atomic relaxation on the electronic structure. The relaxed structure yields electronic-structure results, which are in good agreement with the experimental data. Finally, a comparison of formation enthalpies indicates that the production Tlx Ga1-xAs with TI concentration of at least 8% is possible.