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Two-dimensional atomic-layered material is a recent research focus, and single layer Ta_2O_5 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta_2O_5 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta_2O_5. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta_2O_5,exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta_2O_5. 相似文献
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