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Monolayer MnTe2 stabilized as 1T structure has been theoretically predicted to be a two-dimensional (2D) ferromagnetic metal and can be tuned via strain engineering. There is no naturally van der Waals (vdW) layered MnTe2 bulk, leaving mechanical exfoliation impossible to prepare monolayer MnTe2. Herein, by means of molecular beam epitaxy (MBE), we successfully prepared monolayer hexagonal MnTe2 on Si(111) under Te rich condition. Sharp reflection high-energy electron diffraction (RHEED) and low-energy electron diffraction (LEED) patterns suggest the monolayer is atomically flat without surface reconstruction. The valence state of Mn4+ and the atom ratio of ([Te]:[Mn]) further confirm the MnTe2 compound. Scanning tunneling spectroscopy (STS) shows the hexagonal MnTe2 monolayer is a semiconductor with a large bandgap of ~2.78 eV. The valence-band maximum (VBM) locates at the Γ point, as illustrated by angle-resolved photoemission spectroscopy (ARPES), below which three hole-type bands with parabolic dispersion can be identified. The successful synthesis of monolayer MnTe2 film provides a new platform to investigate the 2D magnetism. 相似文献
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TUNNEL MAGNETORESISTANCE IN THE FERROMAGNETIC TUNNEL JUNCTION WITH FERROMAGNETIC LAYERS OF FINITE THICKNESS SUBJECTED TO AN ELECTRIC FIELD 下载免费PDF全文
Based on the two-band model, we investigate the tunnel magnetoresistance(TMR) in ferromagnet/insulator (semiconductor)/ferromagnet(FM/I(S)/FM) tunnel junction covered on both sides by nonmagnetic metal layers subjected to an electric field. Our results show that TMR oscillates with the thickness of ferromagnetic layers owing to the quantum-size effect and can reach very large value under suitable conditions, which may in general not be reached in FM/I(S)/FM with infinitely thick ferromagnetic layer. Although the electric field causes the change of the oscillation period, phase and amplitude of the TMR, a large TMR is still obtained in some situations with the electric field. Furthermore, the electric field does not change the feature that TMR varies monotonously with the change of magnetization angle of the middle ferromagnetic layer. 相似文献
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利用低温扫描隧道显微镜(LT-STM)研究了酞菁铜(CuPc)分子在Bi(111)表面上的吸附和手性自组装结构。由于较弱的分子-衬底相互作用,我们发现在液氮温度(78 K)下吸附在Bi(111)表面上的单个CuPc分子围绕着分子中心发生旋转,直到遇到其他分子形成团簇为止。随着分子覆盖度的增加,CuPc分子形成了自组装分子单层。高分辨STM图表明,非手性的CuPc分子出现了手性特征:两个相对的酞菁基团发生了弯曲。当覆盖度超过一个分子层,酞菁铜分子的吸附取向由“平躺”转变到“站立”姿态。我们认为,酞菁铜分子的手性起源是由两种因素共同导致的结果:一种是分子-衬底之间的非对称电荷转移,另一种是相邻分子间的非对称性的范德华力作用。 相似文献
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利用超高真空扫描隧道显微镜(UHV-STM)和有机分子束沉积(OMBD)方法研究了全氟并五苯(perfluoropentancene,PFP)分子在半金属Ga表面的吸附和两维自组装. 在低覆盖度下单个PFP分子在Ga表面上表现出很高的迁移性. 在1分子单层(monolayer, ML)时PFP分子发生二聚化并在 Ga 表面上无序排列. 轻度热退火可导致PFP两维自组装: 二聚体排列为高度有序的一维分子带阵列, 带中 PFP二聚体排列为砖墙(brick wall)结构. 在高分辨 STM图中, PFP分子两端出现亮暗相反的圆形突起, 并且相邻分子的亮暗极性相反, 表明PFP分子带有电偶极矩, PFP二聚体带有电四极矩. 因此, PFP分子二聚体的形成机制可唯像解释为反向电偶极矩之间的静电吸引作用; 二聚体的砖墙排列结构可归结为同向电四极矩之间的静电排斥作用. 相似文献
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以多孔CaCO3为模板,采用共沉淀的方法制备了蜂窝型多孔状钛取代的羟基磷灰石(TiHA).采用扫描电子显微镜(SEM)、能谱(EDS)、X射线衍射(XRD)、比表面积分析仪(BET)、紫外-可见漫反射分光光度计(Uv-vis)对多孔TiHA的形貌、结构、元素成分、孔隙率、孔径、紫外可见光响应性进行了测定;以有机污染物代表乙醛为对象,研究了多孔TiHA对乙醛的吸附和催化降解性能,考察了TiHA中钙和钛离子的比例对其吸附和催化性能的影响,提出了催化降解路径和机理.制备的多孔TiHA呈蜂窝型多孔结构,具有羟基磷灰石的基本元素和特征衍射峰,其结晶性比非孔状的TiHA变弱;禁带宽度比TiO2更小;多孔TiHA比表面积为TiHA的1.7倍,有助于提高其表面吸附位点和催化活性,表现出具有更优异的吸附和催化降解性能,对乙醛的吸附率12 h可达82.8;,光催化降解效率120 min达85.8;;钙钛离子比为10:1时,多孔TiHA对乙醛的吸附能力最强;钙钛比为10:5时,催化降解效率最高,并且具有良好的稳定性.催化降解过程是羟基、空穴、超氧自由基共同作用的结果. 相似文献
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分子与衬底之间的相互作用在有机薄膜的生长过程中起着非常重要的作用.对于金属衬底和半金属衬底来说,由于不同的电子结构,二者与分子薄膜之间的相互作用会有明显的差异.本文利用扫描隧道显微镜对比研究了二氰基蒽(DCA)分子在金属衬底Cd(0001)和半金属衬底Bi(111)上的薄膜生长.实验发现,在Cd(0001)衬底上,低温沉积的DCA薄膜表现出三维生长模式,而室温沉积的DCA薄膜表现出二维生长模式.特别是DCA分子单层具有斜方对称的4×(13)(1/2)公度结构,表明DCA与Cd(0001)之间存在较强的相互作用.与此形成鲜明对比的是,在半金属Bi(111)衬底上,低温沉积的DCA薄膜表现出二维生长模式,在分子单层中有莫尔条纹出现,表明DCA单层是一种非公度结构, DCA与Bi(111)之间的相互作用较弱.通过上述的对比研究可以看出,衬底材料的电子结构和沉积温度均可影响DCA分子薄膜的结构和生长模式. 相似文献