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Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination
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The vertical GaN-on-GaN Schottky barrier diode with boron-implanted termination was fabricated and characterized.Compared with the Schottky barrier diode(SBD)without boron-implanted termination,this SBD effectively improved the breakdown voltage from 189 V to 585 V and significantly reduced the reverse leakage current by 10^5 times.In addition,a high Ion/Ioff ratio of ~10^8 was achieved by the boron-implanted technology.We used Technology Computer Aided Design(TCAD)to analyze reasons for the improved performance of the SBD with boron-implanted termination.The improved performance of diodes may be attributed to that B+could confine free carriers to suppress electron field crowding at the edge of the diode,which could improve the breakdown voltage and suppress the reverse leakage current. 相似文献
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