关于高斯定理和电场叠加问题的再讨论

静电场由于有高斯定理和场强叠加原理，所以可采用两种不同途径求解电场。本文简明准确地论述了采用这两种不同途径时分别应注意的事项，并澄清了一些错误的看法。     

An analytical model for coplanar waveguide on silicon-on-insulator substrate with conformal mapping technique

In this paper, the authors present an analytical model for coplanar waveguide on silicon-on-insulator substrate. The four-element topological network and the conformal mapping technique are used to analyse the capacitance and the conductance of the sandwich substrate. The validity of the model is verified by the full-wave method and the experimental data. It is found that the inductance, the resistance, the capacitance and the conductance from the analytical model show they are in good agreement with the corresponding values extracted from experimental S-parameter until 10 GHz.