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Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs
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This paper reports that multi-recessed gate 4H-SiC MESFETs
(metal semiconductor filed effect transistors) with a gate periphery
of 5-mm are fabricated and characterized. The multi-recessed region
under the gate terminal is applied to improve the gate--drain
breakdown voltage and to alleviate the trapping induced
instabilities by moving the current path away from the surface of
the device. The experimental results demonstrate that microwave
output power density, power gain and power-added efficiency for
multi-finger 5-mm gate periphery SiC MESFETs with multi-recessed
gate structure are about 29%, 1.1dB and 7% higher than those
of conventional devices fabricated in this work using the same
process. 相似文献
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