Mechanism of defect evolution in H+ and He+ implanted InP

The defect evolution in InP with the 75 keV H⁺ and 115 keV He⁺ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He⁺ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H⁺ implanted InP. After annealing, the H⁺ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H₂ molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence.     

Hydrothermal synthesis and dielectric properties of chrysanthemum-like ZnO particles

By orthogonal design theory, technological parameters of chrysanthemum-like ZnO particles prepared in a hydrothermal process are optimized. This paper reports a set of technological parameters for growing chrysanthemum-like ZnO particles on a large scale. It investigates the morphologies and crystalline structures of the as-synthesized three-dimensional ZnO particles with a scanning electron microscope, x-ray diffractometer and transmission electron microscope, and the possible growth mechanism on the three-dimensional ZnO particles. The experimental results indicate that the values of ε', ε ' and \tan δ_e gradually increase in the X band with the improvement of the developmental level of chrysanthemum-like ZnO particles, implying that the electromagnetic wave absorbing property depends on the morphologies of three-dimensional ZnO particles.     

Heterogeneous integration of GaSb layer on (100) Si substrate by ion-slicing technique

Integration of the high-quality GaSb layer on an Si substrate is significant to improve the GaSb application in optoelectronic integration. In this work, a suitable ion implantation fluence of 5×10¹⁶-cm^-2 H ions for GaSb layer transfer is confirmed. Combining the strain change and the defect evolution, the blistering and exfoliation processes of GaSb during annealing is revealed in detail. With the direct wafer bonding, the GaSb layer is successfully transferred onto a (100) Si substrate covered by 500-nm thickness thermal oxide SiO₂ layer. After being annealed at 200 ℃, the GaSb layer shows high crystalline quality with only 77 arcsec for the full width at half maximum (FWHM) of the x-ray rocking curve (XRC).     

Effect of Sb-doping on the morphology and the dielectric properties of chrysanthemum-like ZnO nanowire clusters

Chrysanthemum-like ZnO nanowire clusters with different Sb-doping concentrations were prepared by using the hydrothermal process. The microstructures, morphologies, and dielectric properties of the as-prepared products were characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), field emission environment scanning electron microscope (FEESEM), and microwave vector network analyzer respectively. The results indicate that the as-prepared products are Sb-doped ZnO single crystallines with hexagonal wurtzite structure, the flower bud saturation degree F_d is obviously different from that of the pure ZnO nanowire clusters, the good dielectric loss property is found in Sb-doped ZnO products with low density, and the dielectric loss tangent tanδ _e increases with the increase of the Sb-doping concentration in a certain concentration range.     

Effect of Sb-doping on the morphology and dielectric properties of chrysanthemum-like ZnO nanowire clusters

Chrysanthemum-like ZnO nanowire clusters with different Sb-doping concentrations were prepared using a hydrothermal process. The microstructures, morphologies, and dielectric properties of the as-prepared products were characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), field emission environment scanning electron microscope (FEESEM), and microwave vector network analyzer respectively. The results indicate that the as-prepared products are Sb-doped ZnO single crystallines with a hexagonal wurtzite structure, the flower bud saturation degree F d is obviously different from that of the pure ZnO nanowire clusters, the good dielectric loss property is found in Sb-doped ZnO products with low density, and the dielectric loss tangent tanδ e increases with the increase of the Sb-doping concentration in a certain concentration range.     

Effect of polyacrylamide on morphology and electromagnetic properties of chrysanthemum-like ZnO particles

Through hydrothermal process, the chrysanthemum-like ZnO particles are prepared with zinc acetate dihydrate (Zn(CH₃COO)₂\cdot 2H₂O) and sodium hydroxide (NaOH) used as main resources under the different concentrations of surfactant polyacrylamide (PAM). The microstructure, morphology and the electromagnetic properties of the as-prepared products are characterized by high-resolution transmission electron microscopy (HRTEM), field emission environment scanning electron microscope (FEESEM) and microwave vector network analyzer, respectively. The experimental results indicate that the as-prepared products are ZnO single crystalline with hexagona wurtzite structure, that the values of slenderness ratio L_d are different in different PAM concentrations, and that the good magnetic loss property is found in the ZnO products, and the average magnetic loss tangent tanδ_u increases with PAM concentration increasing, while the dielectric loss tangent tanδ _e decreases.     

Effect of Mn-doping on the growth mechanism and electromagnetic properties of chrysanthemum-like ZnO nanowire clusters

Chrysanthemum-like ZnO nanowire clusters with different Mn-doping concentrations are prepared by a hydrothermal process. The microstructure, morphology and electromagnetic properties are characterized by x-ray diffractometer high-resolution transmission electron microscopy (HRTEM), a field emission environment scanning electron microscope (FEESEM) and a microwave vector network analyser respectively. The experimental results indicate that the as-prepared products are Mn-doped ZnO single crystalline with a hexagonal wurtzite structure, that the growth habit changes due to Mn-doping and that a good magnetic loss property is found in the Mn-doped ZnO products, and the average magnetic loss tangent tanδ_m is up to 0.170099 for 3% Mn-doping, while the dielectric loss tangent tanδ_e is weakened, owing to the fact that ions Mn^{2 +} enter the crystal lattice of ZnO.