Wettability of Si and Al–12Si alloy on Pd-implanted 6H–SiC

Si C monocrystal substrates are implanted by Pd ions with different ion-beam energies and fluences,and the effects of Pd ion implantation on wettability of Si/Si C and Al–12 Si/Si C systems are investigated by the sessile drop technique.The decreases of contact angles of the two systems are disclosed after the ion implantation,which can be attributed to the increase of surface energy(σ_(SV)) of Si C substrate derived from high concentration of defects induced by the ionimplantation and to the decrease of solid–liquid surface energy(σ_(SL)) resulting from the increasing interfacial interactions.This study can provide guidance in improving the wettability of metals on Si C and the electronic packaging process of Si C substrate.     

铜在乳状液膜体系中的迁移行为

近年来膜分离技术在环境治理方面得到广泛应用。本文研究了铜在span80-TBP（磷酸三丁酯）-煤油-NH3液膜分离体系中的迁移行为。用TBP作为载体,在溶液中迁移时,在外相与膜相界面上形成中性络合物后穿过膜相,在膜相与内相界面上络合物再与NH3反应,生成铜氨络离子,释放出来的TBP又返回膜相。     

一类非瞬时脉冲发展方程解的存在性

在Banach空间中研究一类具有记忆型非瞬时脉冲和非局部条件的半线性积分-微分发展方程mild解的存在性和唯一性,利用算子半群理论、Banach压缩原理和Krasnoselskii's不动点定理给出主要结果的证明,进一步得到该问题强解存在的充分条件.与以往具有非瞬时脉冲的发展方程模型相比,本文所讨论的双参数发展系统问题...