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Compact Arrayed-Waveguide Grating on Silicon-on-Insulator with Integrated Waveguide Turning Mirrors
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A compact arrayed-waveguide grating (AWG) on the silicon-on-insulator material is designed and fabricated with employment of waveguide-integrated turning mirrors (WITMs). By properly setting the incident angle with the value of 45°, the effective area of the WITM AWG is only 1.15 cm×1.15 cm with the arrayed waveguide area of 0.6cm×0.6cm. The crosstalk of the fabricated 1×6 AWG is better than -19 dB. The on-chip insertion loss is about -8.8 dB and the output nonuniformity is less than 0.6 dB. The polarization-dependent central wavelength shift is about 0.048nm and the polarization dependent loss is neglectable. 相似文献
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Experimental Demonstration of Two-Dimensional Multimode-Interference Optical Power Splitter 总被引:2,自引:0,他引:2
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A two-dimensional multlmode-interference optical power splitter is designed and demonstrated. The new device can be used for the optical power splitting in two transverse directions. Silicon-on-lnsulator technology is utilized to fabricate the device. The performance of the device is tested. 相似文献
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We describe a novel compact power splitter with tunable power splitting ratios based on multimode interference couplers employing area modulation in a polymer. The experiments show large tuning ranges with splitting ratio varies from 6:94 to 88:12 and low heating power of 5mW for π phase shift. 相似文献
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基于多模干涉自映像原理,分析了一种仅含一个复合调制区的1×3光开关。该开关处于不同工作状态时,调制臂上所加相位调制量之间存在倍数关系,于是可将调制臂上的相移器组合成一个复合调制区,通过连续改变复合调制区的折射率变化量,因此可以将来自任一输入端的光场轮流切换到任意输出端口。以Al0.07,Ga0.93As/GaAs脊形波导结构为例,采用BEAMPROP软件,对该开关进行了优化和理论验证。消光比高达30.3dB;相邻通道之间的串扰低于-29.8dB;在1.31μm工作波长处约50nin的波谱范围内,串扰低于-20dB。该结构可简化传统多通道开关的调制方法,降低外加控制方法的复杂程度。 相似文献
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在机械混合的 MgO-Mg3(VO4)2, Mg3(VO4)2-Mg2V2O7 和 V2O5-MgV2O6 双晶相催化剂体系上, 研究了晶相间协同催化效应对环己烷氧化脱氢反应性能的影响. 催化剂表征和反应结果表明, 双晶相间协同效应或源于不同晶相间形成的内聚界面, 或遵从溢流氧的遥控机理, 或产生于其中一个晶相完全包覆整个催化剂表面. 当在 Mg3(VO4)2 上进行环己烷氧化脱氢反应时, 可加入适量 MgO 或 Mg2V2O7 以提高其催化性能. 在 80%Mg3(VO4)2-20%Mg2V2O7 催化剂上, 当环己烷转化率为 15.5% 时, 环己烯选择性达 44.9%. 相似文献
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Two new nonmetal borates, [(C2H10N2)]2[B14O20(OH)6] 1 and [C8H22N4][B5O6(OH)4]2 2, have been synthesized under mild conditions and characterized by single-crystal X-ray diffraction, FTIR, elemental analysis and thermogravimetric analysis. Crystal data for compound 1: triclinic, space group P^-1, a = 8.4979(17), b = 8.8498(18), c = 10.065(2)A^°, α = 95.01(3), β = 96.99(3), γ = 116.82(3)°, V= 661.8(3)A^°^3, Z= 1, Mr = 697.63, Dc = 1.751 g/cm^3,μ = 0.163 mm^-1, F(000) = 356, the final R = 0.0372 and wR = 0.0968 (I 〉 2σ(I)); and those for compound 2: monoclinic, space group P21/c, a = 9.1867(18), b= 14.118(3), c = 10.334(2)A^°, β = 91.48(3)°, V = 1339.8(5)A^°^3, Z = 2, Mr = 610.46, Dc = 1.513 g/cm^3,μ = 0.135 mm^-1, F(000) = 632, the final R = 0.0350 and wR = 0.0912 (I 〉 2σ(I)). For both 1 and 2, the anionic units are interlinked via O-H…O hydrogen bonds to form a 3D supramolecular network, while the protonated cations are located in the free space of the inorganic borate framework and interact with the anions by electrostatic attraction and extensive N-H…O hydrogen bonds. 相似文献
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ICF实验会产生大量X射线和γ射线,其在光电倍增管(PMT)中产生的脉冲信号过大,导致前端电子学电路饱和,严重影响电路的正常工作和中子飞行时间的测量。结合前端电子学系统的结构,对电路饱和的原因进行了深入分析,提出了非线性抗饱和电路改进方案,并进行了仿真和实验研究。仿真结果表明,该设计方案能够大幅衰减大信号而确保小信号的通过,信号通过后电路基线能在35 ns内恢复;电路的实测结果与仿真结果基本相同。这表明:采取的方案简洁有效,能够确保输入高达数十V脉冲的情况下电路的正常工作。目前这一电路已经得到应用,并将安装在某大型激光原型的大阵列中子探测器上。 相似文献
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针对已有的求解三维裂纹的应力强度因子方法工作量大、难以实现复杂的三维模型建立的问题,提出了一种求解广义移动荷载下三维裂纹尖端应力强度因子的普遍方法。采用包络式三维实体建模方法,有效避免了三维裂纹有限元模型网格划分时因受限于拓扑误差容忍而出现网格划分失败的现象;通过MATLAB三维插值施加节点荷载,解决了不规则三维裂纹有限元模型施加复杂空间荷载的难题。计算结果表明:荷载中心距离裂纹中心约4mm时裂纹尖端应力强度因子达到最大值7.41×107Pa·m1/2;轮轨接触疲劳以张开型为主。此外,给出了最大应力强度因子条件下裂纹尖端塑性区的分布及裂纹扩展情况,可为轮轨滚动接触疲劳的研究及设计提供一定的参考。 相似文献
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