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Tunable Perpendicular Magnetic Anisotropy in Off-Stoichiometric Full-Heusler Alloy Co_2MnAl
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Off-stoichiometric full-Heusler alloy Co_2 MnAl thin films with different thicknesses are epitaxially grown on GaAs(001) substrates by molecular-beam epitaxy. The composition of the films, close to Co_(1.65)Mn_(1.35)Al(CMA),is determined by x-ray photoelectron spectroscopy and energy dispersive spectroscopy. Tunable perpendicular magnetic anisotropy(PMA) from 3.41 Merg/cm~3 to 1.88 Merg/cm~3 with the thickness increasing from 10 nm to 30 nm is found,attributed to the relaxation of residual compressive strain. Moreover, comparing with the ultrathin CoFeB/MgO used in the conventional perpendicular magnetic tunnel junction, the CMA electrode has a higher magnetic thermal stability with more volume involved. The PMA in CMA films is sustainable up to 300℃,compatible with semiconductor techniques. This work provides a possibility for the development of perpendicular magnetized full-Heusler compounds with high thermal stability and spin polarization. 相似文献
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Ultrafast Magnetization Precession in Perpendicularly Magnetized L1_0-MnAl Thin Films with Co_2 MnSi Buffer Layers
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Perpendicularly magnetized L10-MnAl thin films with Co2 MnSi bufer layers were prepared on GaAs(001) substrates by molecular-beam epitaxy(MBE).The samples with high crystalline quality show a maximum uniaxial perpendicular magnetic anisotropy constant of 1.4×107 erg/cm3.Ultrafast spin dynamics with a magnetization precession frequency up to 200 GHz was investigated by using time-resolved magneto-optical Kerr effect(TRMOKE) measurements,from which the G... 相似文献
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Tunneling Anisotropic Magnetoresistance in L1_0-MnGa Based Antiferromagnetic Perpendicular Tunnel Junction
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We report on the tunneling anisotropic magnetoresistance in antiferromagnetic perpendicular tunnel junction consisting of L1_0-MnGa/FeMn/AlO_x/Pt grown on GaAs(001) substrates by molecular-beam epitaxy. The temperature-dependent perpendicular exchange bias effect reveals an exchange coupling between ferromagnetic L1_0-MnGa and antiferromagnetic FeMn. The rotation of antiferromagnetic spins in FeMn can be driven by perpendicularly magnetized L1_0-MnGa due to the exchange-spring effect at the interface and leads to roomtemperature tunneling anisotropic magnetoresistance ratio of 0.86%. We also find that the tunneling anisotropic magnetoresistance strongly depends on temperature and angle. These results have broadened the material selection range for high performance antiferromagnetic spintronic devices. 相似文献
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