排序方式: 共有31条查询结果,搜索用时 31 毫秒
1.
利用傅立叶转换红外光谱和Raman谱仪分析了0.98 GeV的Fe离子在电子能损Se为3.5 keV/nm时, 不同辐照剂量(5×1010 —8×1013 ions/cm2)下, 在C60薄膜中引起的辐照损伤效应。 分析表明, Fe离子辐照引起了C60分子的聚合与损伤。 在辐照剂量达到一中间值1×1012 ions/cm2, C60分子的损伤得到部分恢复, 归因于电子激发引起的退火效应。 通过对Raman数据的拟合分析, 演绎出Fe离子辐照在C60材料中形成的潜径迹截面或引起损伤的截面约为1.32×10-14 cm2。 相似文献
2.
主要研究了110keV的He+高温注入Al2O3单晶及1.1MeV/u的208Pb27+辐照注氦Al2O3样品的光致发光的特性. 从测试结果可以清楚地看到在375nm, 413nm和450nm处出现了强烈的发光峰. 并且在600K, 5×10sup>16ions/cm2剂量点, 样品的发光峰是最强的. 这
表明He+注入Al2O3后使带隙中深的辐射中心复合的效率大幅度提高, 极大的增强了其发光强度,而且发光伴随着蓝移现象. 而经过高能208Pb27+辐照后的样品, 在390nm出现了新的发光峰,从FTIR谱中我们能够看到, 可能是208Pb27+辐照相对沉积膜出现一定的晶化, 其中含有许多纳米尺寸的Al2O3晶粒所致. 相似文献
3.
4.
重离子实验结果表明,具有高线性能量转移(LET)或大角度入射的快重离子导致静态随机存储器(SRAM)中的多位翻转(MBU)比例增大,甚至超过单位翻转比例。单个离子径迹中的电荷可以沿着径向扩散数个微米,被临近的灵敏区收集后引起MBU。器件灵敏区的各向异性空间布局与离子入射方向共同影响测试器件的MBU图形特征。位线接触点的纵向隔离导致横向型成为主要的两位翻转图形;"L"型和"田"型分别是主要的三位翻转和四位翻转图形。最后,对SRAM抗MBU加固设计和实验验证方法进行了讨论。 相似文献
5.
Highly oriented pyrolytic graphites are irradiated with 40.5-Me V and 67.7-Me V ^112Sn-ions in a wide range of fluences: 1×10^11 ions/cm^2–1×10^14ions/cm^2. Raman spectra in the region between 1200 cm^-1 and 3500cm^-1 show that the disorder induced by Sn-ions increases with ion fluence increasing. However, for the same fluence, the amount of disorder is greater for 40.5-Me V Sn-ions than that observed for 67.7-Me V Sn-ions, even though the latter has a slightly higher value for electronic energy loss. This is explained by the ion velocity effect. Importantly, ~ 3-cm^-1frequency shift toward lower wavenumber for the D band and ~ 6-cm^-1 shift toward lower wavenumber for the 2D band are observed at a fluence of 1×10^14 ions/cm^2, which is consistent with the scenario of radiation-induced strain. The strain formation is interpreted in the context of inelastic thermal spike model, and the change of the 2D band shape at high ion fluence is explained by the accumulation of stacking faults of the graphene layers activated by radiation-induced strain around ion tracks. Moreover,the hexagonal structure around the ion tracks is observed by scanning tunneling microscopy, which confirms that the strains near the ion tracks locally cause electronic decoupling of neighboring graphene layers. 相似文献
6.
用能量为22 MeV/u的 Fe离子在室温和真空条件下辐照了多层堆叠的半晶质聚酯膜, 采用傅里叶转换红外吸收光谱、 紫外/可见吸收光谱 和X射线衍射技术分析测量了辐照后聚酯膜的微观结构所发生的变化, 详细研究了分子结构的变化和非晶化转变与离子剂量、 离子在样品中的平均电子能损以及吸收剂量的依赖关系. 分析结果表明: 辐照导致化学键的断裂、 新化学键的形成和非晶化转变. 非晶化效应和化学键的断裂随离子剂量和电子能损的增加而增大, 但变化的总量仅依赖于总的吸收剂量, 表明在所涉及的能损范围里, 辐照产生的变化与辐照离子的种类和能量没有直接的关系, 而只决定于材料对辐照离子能量的吸收程度. Semicrystalline polyethylene terephthalate (PET) film stacks were irradiated with 22 MeV/u Fe ions at room temperature under vacuum. Ion beam induced microscopic structural modifications and amorphous transformation were investigated by means of Fourier transform infrared spectrosocopy (FTIR), ultraviolet visible absorption spectrosocopy (UV/Vis) and X ray diffractometer (XRD). It was found that irradiation induces bond breaking, formation of new free radiculs and amorphous transformation. These effects were found to depend on ion fluence , the electronic energy loss and aborbed dose. The creation of alkyne groups was found only at the aborbed dose higher than 5.0 MGy. 相似文献
7.
重离子辐照的高分子有机膜,经过适当的处理,可以作为模板制备金属和可溶性盐纳米线,此方法称为离子径迹模板法。介绍了用电化学沉积方法和过饱和溶液法制备金属纳米线和可溶性盐纳米线的基本原理和制各实例,同时还展望了离子径迹模板法制备纳米线的一些可能的应用。The polymer foils irradiated by heavy ions can be used as temptates to prepai nanowires and some inorganic salt nanowires. It is called "ion-track template method". Compared to other templates, such as AAO template and porous silicon, etched ion-track template is more convenient and flexible. The density of the pores can be easily controlled by changing the ion fluences and the diameter of the pores can be altered through changing the etching condition. The pores of the etched ion-track template are well aligned. We present some examples of preparing metallic nanowires and inorganic salt wires by electrochemical deposition and by supersaturation solution method, respectively. We also introduce some applications of nanowires prepared with ion-track template method. 相似文献
8.
Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
Experimental evidence is presented relevant to the angular dependences of multiple-bit upset (MBU) rates and patterns in static random access memories (SRAMs) under heavy ion irradiation. The single event upset (SEU) cross sections under tilted ion strikes are overestimated by 23.9% 84.6%, compared with under normally incident ion with the equivalent linear energy transfer (LET) value of ~ 41 MeV/(mg/cm 2 ), which can be partially explained by the fact that the MBU rate for tilted ions of 30 is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of ~ 9.5 MeV/(mg/cm 2 ), no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset (DBU) patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects (SEE) sensitivity, especially in MBU-sensitive devices. 相似文献
9.
利用快重离子辐照的单晶白云母片产生潜径迹,蚀刻得到直径在30—180 nm纳米孔道. 孔道形状依赖于蚀刻时间,蚀刻时间短得到圆柱形孔道,蚀刻时间长得到菱柱形孔道. 从而在云母模板孔道中电化学沉积得到不同直径和形状的Cu纳米线. 通过紫外可见光谱分析,发现铜纳米线的尺寸和形状影响其光学性质. 直径小于60 nm的近似为圆柱状Cu纳米线有一个明显的表面等离子体共振峰和一个微弱的次峰. 随着直径增加,菱柱状的Cu纳米线主峰有明显的红移,次峰逐渐增强. 同时利用扫描电子显微镜、X射线衍射对Cu纳米线的形貌和晶体结构特征进行了表征.
关键词:
Cu纳米线
电化学沉积
光学性质
云母模板 相似文献
10.
利用电化学沉积在重离子径迹模版中制备出了不同直径的一维钯纳米线。利用扫描电子显微镜、透射电子显微镜和X射线衍射等多多种手段对制得的钯纳米线进行了形貌和结构表征。利用紫外可见光谱仪分析了钯纳米线的光学响应,发现钯纳米线存在表面等离子体共振现象。随着纳米线直径和长度的增加,其表面等离子体共振峰位发生红移;通过改变光谱测试中激发光的入射角度,其表面等离激元共振模式会随着角度的增大而变多,这可能是在横向振动模式的基础上激发了沿纳米线长度方向振动的纵向模式。与此同时,基于时域有限差分法对钯纳米线的表面等离子体共振特性进行数值模拟,结果与实验符合较好。Palladium nanowires with varied diameters were fabricated using ion-track templates coupled with electrochemical deposition. The morphology and crystallographic structure were characterized with Scanning Electron Microscopy, Transmission Electron Microscopy, X-ray diffraction (XRD). The plasmonic responses of the as-prepared nanowires were investigated by UV-Vis-NIR spectroscopy and the simulations based on the finite-difference time-domain algorithm. The results demonstrate that the surface plasmon resonances of Pd nanowire are sensitive to the wire geometry, but also influenced by the incidence angle of light. The frequency of the transverse dipolar plasmon resonance of nanowire arrays shifts within a wide range from visible to near infrared. With increasing of wires' diameter or length, the resonance peak shifts to the red. With increasing of incident angle, a new peak appears, which is possibly assigned to the excitation of the longitudinal resonance. In addition, numerical simulations disclose that propagating surface plasmon polaritons can be excited on the palladium nanowires and the wavelength of the resonance peak is in good agreement with the experimental results. 相似文献