钙钛矿相界面插层对SrFeOx基忆阻器的性能提升

SrFeO_x(SFO)是一种能在SrFeO_2.5钙铁石(BM)相和SrFeO₃钙钛矿(PV)相之间发生可逆拓扑相变的材料.这种相变能显著改变电导却维持晶格框架不变,使SFO成为一种可靠的阻变材料.目前大部分SFO基忆阻器使用单层BM-SFO作为阻变功能层,这种器件一般表现出突变型阻变行为,因而其应用被局限于两态存储.对于神经形态计算等应用,单层BM-SFO忆阻器存在阻态数少、阻值波动大等问题.为解决这些问题,本研究设计出BM-SFO/PV-SFO双层忆阻器,其中PV-SFO层为富氧界面插层,可在导电细丝形成过程中提供大量氧离子并在断裂过程中回收氧离子,使导电细丝的几何尺寸(如直径)在更大范围内可调,从而获得更多、更连续且稳定的阻态,可用于模拟长时程增强和抑制等突触行为.基于该器件仿真构建了全连接神经网络(ANN),在手写体数字光学识别(ORHD)数据集进行在线训练后获得了86.3%的识别准确率,相比于单层忆阻器基ANN的准确率提升69.3%.本研究为SFO基忆阻器性能调控提供了一种新方法,并展示了它们作为人工突触器件在神...     

Sr-doping effects on conductivity,charge transport,and ferroelectricity of Ba_(0.7)La_(0.3)TiO_3 epitaxial thin films

Sr-doped Ba_0.7La_0.3TiO₃(BSLTO)thin films are deposited by pulsed laser deposition,and their microstructure,conductivity,carrier transport mechanism,and ferroelectricity are systematically investigated.The x-ray diffraction measurements demonstrate that Sr-doping reduces the lattice constant of BSLTO thin films,resulting in the enhanced phonon energy in the films as evidenced by the Raman measurements.Resistivity-temperature and Hall effect measurements demonstrate that Sr can gradually reduce electrical resistivity while the electron concentration remains almost unchanged at high temperatures.For the films with semiconducting behavior,the charge transport model transforms from variable range hopping to small polaron hopping as the measurement temperature increases.The metalic conductive behaviors in the films with Sr=0.30,0.40 conform to thermal phonon scattering mode.The difference in charge transport behavior dependent on the A-site cation doping,is clarified.It is revealed that the increasing of phonon energy by Sr doping is responsible for lower activation energy of small polaron hopping,higher carrier mobility,and lower electrical resistivity.Interestingly,the piezoelectric force microscopy(PFM)results demonstrate that all the BSLTO films can exhibit ferroelectricity,especially for the room temperature metallic conduction film with Sr=0.40.These results imply that Sr-doping could be a potential way to explore ferroelectric metal materials for other perovskite oxides.     

揭开Nb:SrTiO_3阻阻变效应的潘多拉盒子

正本世纪初,纪元轮回,但万物却无法归于原始,我们的欲望依然是更高、更快、更强。人类一方面对大数据有无止境追求,另一方面又懒于亲力亲为,使得对物联网等新行业需求非线性上升。这些需求为数据存储器的容量、密度、读写速度和功耗规划了欲望之城。例如,想拷贝一套一位很挫教授讲授的《电磁学》视频,竟然要200 Gb数据盘;想备份张嘉译的     

外场对拓扑相变氧化物薄膜物性的调控研究进展

钙钛矿型过渡金属氧化物在外场激励下可以通过得失氧离子发生显著的结构拓扑相变,同时伴随着输运、磁性、光学等物性的巨大变化,是近年来被重点关注的研究体系,在固态氧化物燃料电池、氧气传感器、催化活性、智能光学窗口以及神经形态计算器件中具有巨大的应用前景.本工作回顾了近年来国内外研究小组在拓扑相变氧化物薄膜及其物性调控方面的工作进展,详细介绍了这类典型薄膜材料在应力场、电场、光场、温度场等外场激励下呈现出的新奇物性,并讨论了其基本物理机制.本综述旨在进一步认识此类材料中的电荷、晶格、轨道等量子序之间的微观耦合机制及其与宏观物性的关联,相关研究有望为基于功能氧化物的高灵敏度、弱场响应的电子器件提供新材料、新途径和新思路.