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Low-Temperature Growth of Polycrystalline silicon Films by SiCl4/H2 rf Plasma Enhanced Chemical Vapour Deposition 总被引:4,自引:0,他引:4 下载免费PDF全文
Polycrystalline silicon film was directly fabricated at 200℃ by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution. The crystallization depends strongly on the deposition power.The maximum crystMlinity and the crystalline grain size are over 80% and 200—50Onm, respectively. The results of energy dispersive spectroscopy and infrared spectroscopy measurements demonstrate that the film is mostly composed of silicon, without impurities such as Cl, N, C and bonded H. It is suggested that the crystallization at such a low temperature originates from the effects of chlorine, i.e., in-situ chemical, etching, in-situ chemical cleaning, and the detachment of bonded H. 相似文献
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A Movable Mass Spectroscopy Sampling Apparatus for Measuring Spatial Distribution of Neutral Radicals in Silane Plasma 下载免费PDF全文
A movable mass spectroscopy gas sampling apparatus has been established and a straight-line fit of silane depletion fraction f is proposed. The spatial density distributions of SiHn (n=0-3) radicals in silane radio frequency glow discharge have been measured by a mass spectrometer. The experimental results demonstrate that the densities of the neutral radicals have the peak value near the middle position of electrodes, and the densities of SiH2 and SiH3 are higher than those of Si and SiH in silane plasma. This reveals that SiH2 and SiH3 may be the primary precursors in forming the a-Si:H film. 相似文献
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利用脉冲激光制膜法,在多种衬底和温度条件下,系统研究了La0.5Sr0.5CoO3(LSCO)薄膜的结构和外延生长特性,在LaAlO3,SrTiO3和MgO衬底上实现了LSCO薄膜的外延生长.外延生长的薄膜具有低的电阻率和金属性导电特征.研究表明,外延生长的最佳温度范围为700—800℃,最佳衬底为LaAlO3.并着重探讨了衬底材料和淀积温度等多种因素对LSCO薄膜的生长与性
关键词: 相似文献
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The reliability of measurements on electron energy distribution function in silane rf glow discharges 总被引:1,自引:0,他引:1 下载免费PDF全文
Electron energy distribution function (EEDF) is a key parameter of plasmas, which is directly proportional to the second derivative of the probe I-V characteristics. Because of an amplifying effect of unavoidable noises in the experimental probe I-V curves during the derivation process, the experimental I-V curves should be smoothed before performing the numerical derivation. This paper investigates the effect of adjustable factors used in the smoothing process on the deduced second derivative of the I-V curves, and an optimum group of the adjustable factors is selected to make the rms deviation of the smoothed I-V curves from the measured curves less than 1%. A simple differentiation circuit is designed and used to measure the EEDF parameter straightforwardly. It is the first time, so far as we know, to measure the EEDF parameters simultaneously by means of both numerical and circuit derivative methods under the same discharge conditions and on the same discharge equipment. The deviation between two groups of mean electron energy E and electron density n_e obtained by the above different methods is within about 7%. This apparently improves the reliability of the measurements of the EEDF parameters. 相似文献
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Radicals produced by the plasma enhanced chemistry vapour deposition technique in SiCl4 plasma are identified by mass spectrometry using our newly proposed straight-line fit method. Since flow rate is one of the most important parameters in depositing thin films, we present the effects of SiCl4 flow rate variation on SiCln (n 〈 3) densities. The experimental results demonstrate that Si and SiCln (n = 1, 2) densities decrease with increasing SiCl4 flow rate. After reaching the minimum values at a flow rate of 17 and 13sccm, respectively, Si and SiCln (n = 1, 2) densities slightly increase with further increase of flow rate to 20.5sccm. These results could be interpreted to which the depletion fraction of SiCl4 decreases and the residence time of SiCl4 molecule becomes shorter, with the increasing SICl4 flow rate. In order to obtain high-quality poly-Si films with high growth rate, it is better to use smaller flow rate of SICl4 source gas for depositing films. 相似文献
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以SiCl4H2为气源,用等离子体增强化学气相沉积(PECVD)方法低温快速沉积多晶硅薄膜.实验发现,在多晶硅薄膜的生长过程中,气相空间各种活性基团的相对浓度是影响晶粒大小的重要因素,随功率、H2/SiCl4流量比的减小和反应室气压的增加,晶粒增大.而各种活性基团的相对浓度依赖于PECVD工艺参数,通过工艺参数的改变,分析生长过程中空间各种活性基团相对浓度的变化,指出“气相结晶”过程是晶粒长大的一个重要因素.
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气相结晶
多晶硅薄膜
晶粒生长
SiCl4 相似文献