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利用离子注入方法和光致发光技术系统研究了注入离子对n型GaN宽黄光发射带的影响.实验采用的注入离子为:N,O,Mg,Si和Ga,剂量分别为1013,1014,1015和1016/cm2,注入温度为室温.注入后的样品在900 ℃流动氮气环境下进行热退火,退火时间为10 min,并对退火前后的样品分别进行室温光致发光测量.通过实验数据的分析,独立提出了提取注入离子对晶体黄光发光特性影响的半经验模型.利用该模型导出的公式,可以确定注入的N,O,Ga,Mg和Si离子对黄光发射带的影响随注入剂量的变化关系以及该影响的相对强弱.
关键词:
氮化镓
光致发光谱
离子注入 相似文献
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A new method to monitor the energy variation of a multi-energy electron linac by combining a Cerenkov detector and a CsI(Tl) detector is reported. The signals in the Cerenkov detector show an appreciable but different dependence on the energy of the electron linac from the traditional CsI(Tl) detector due to the particular response of the former to charged electrons with high velocity above threshold. The method is more convenient than the HVL (half-value layer) method which is commonly employed to calibrate the energy of an electron linac for real time monitoring. The preliminary validity of the method is verified in a dual-energy electron linac with 6 MeV and 3 MeV gears. Moreover, the method combining the Cerenkov detector and the CsI(Tl) detector is applicable to probe the X-ray spectrum hardened by the inspected material and may serve as a novel tool for material discrimination with effective atomic number in radiation imaging. 相似文献
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